SCHEMBL718150

SCHEMBL718150

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nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1459105 0.82
SCHEMBL10407833 0.82
SCHEMBL249768 0.82
SCHEMBL8044689 0.82
SCHEMBL3580878 0.82
SCHEMBL1512681 0.82
SCHEMBL8038953 0.82
SCHEMBL650372 0.82
Xenon SCHEMBL4832667 0.67
SCHEMBL895890 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6162717-A Method of manufacturing MOS gate utilizing a nitridation reaction PROMOS TECHNOLOGIES, INC (TW) 2000-12-19 US claimed
CN-115373056-A Microlens and method for manufacturing the same 深圳通感微电子有限公司 2022-11-22 CN disclosed
US-20120049107-A1 SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING PROCESS AND METHOD OF FORMING PHASE CHANGE MEMORY DEVICE USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-03-01 US disclosed
US-7348190-B2 Method of detecting a defect in a semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-03-25 US disclosed
US-20060019419-A1 Method of detecting a defect in a simiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-01-26 US disclosed
US-6162717-A Method of manufacturing MOS gate utilizing a nitridation reaction PROMOS TECHNOLOGIES, INC (TW) 2000-12-19 US disclosed