SCHEMBL717252

SCHEMBL717252

[Al+3].[N-3].[Zr]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5885503 0.82
SCHEMBL4865213 0.82
SCHEMBL7973038 0.82
SCHEMBL16037 0.82
SCHEMBL18886767 0.82
SCHEMBL8849452 0.82
SCHEMBL10578755 0.82
SCHEMBL2241382 0.67
Water SCHEMBL1263931 0.67
SCHEMBL259182 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7755075-B2 Phase-change memory device with minimized reduction in thermal efficiency and method of manufacturing the same ELPIDA MEMORY, INC. (JP) 2010-07-13 US claimed
US-7532507-B2 Phase change memory device and method for manufacturing phase change memory device ELPIDA MEMORY, INC. (JP) 2009-05-12 US claimed
US-7498601-B2 Phase-change memory device and method of manufacturing same ELPIDA MEMORY, INC. (JP) 2009-03-03 US claimed
US-7368802-B2 Phase-change memory device and method of manufacturing same ELPIDA MEMORY, INC. (JP) 2008-05-06 US claimed
US-20080042118-A1 PHASE-CHANGE MEMORY DEVICE WITH MINIMIZED REDUCTION IN THERMAL EFFICIENCY AND METHOD OF MANUFACTURING THE SAME ELPIDA MEMORY, INC. (JP) 2008-02-21 US claimed
US-20070267669-A1 Phase-changeable memory device and method of manufacturing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-11-22 US claimed
US-20070165452-A1 PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING PHASE CHANGE MEMORY DEVICE ELPIDA MEMORY, INC. (JP) 2007-07-19 US claimed
US-20070120107-A1 PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING SAME ELPIDA MEMORY, INC 2007-05-31 US claimed
US-20070120106-A1 PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING SAME ELPIDA MEMORY, INC 2007-05-31 US claimed
EP-2628826-A1 Coated cutting tool and method for making the same Sandvik Intellectual Property AB (SE) 2013-08-21 EP disclosed
US-8513051-B2 Methods of forming phase-changeable memory devices including an adiabatic layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-08-20 US disclosed
US-20120049107-A1 SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING PROCESS AND METHOD OF FORMING PHASE CHANGE MEMORY DEVICE USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-03-01 US disclosed
US-7910398-B2 Phase-change memory device and method of manufacturing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-03-22 US disclosed
US-7838326-B2 Methods of fabricating semiconductor device including phase change layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-11-23 US disclosed
US-20070120107-A1 PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING SAME ELPIDA MEMORY, INC 2007-05-31 US disclosed
US-20060039192-A1 Phase-changeable memory devices including an adiabatic layer and methods of forming the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-02-23 US disclosed
US-20060030108-A1 Semiconductor device and method of fabricating the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-02-09 US disclosed
US-20050174861-A1 Phase-change memory device and method of manufacturing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-08-11 US disclosed
WO-2003033758-A1 DECORATIVE HARD COATING AND METHOD FOR MANUFACTURE THE CHINESE UNIVERSITY OF HONG KONG (CN) 2003-04-24 WO disclosed
US-20030072974-A1 Decorative hard coating and method for manufacture CHINESE UNIVERSITY OF HONG KONG, THE (HK) 2003-04-17 US disclosed