Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Nitric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Nitric Acid SCHEMBL10624080 | 0.95 | — | — | |
| Nitric Acid SCHEMBL8431177 | 0.95 | — | — | |
| Nitric Acid SCHEMBL10711519 | 0.90 | CA5A (0.80) | — | |
| Nitric Acid SCHEMBL2253627 | 0.90 | — | — | |
| Nitric Acid SCHEMBL9059682 | 0.90 | — | — | |
| Nitric Acid SCHEMBL10408670 | 0.90 | — | — | |
| Nitric Acid SCHEMBL904738 | 0.90 | — | — | |
| Nitric Acid SCHEMBL11422287 | 0.90 | — | — | |
| Nitric Acid SCHEMBL9645194 | 0.90 | — | — | |
| Nitric Acid SCHEMBL2996642 | 0.90 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118005019-A | Polycrystalline silicon rod and method for manufacturing polycrystalline silicon rod | 信越化学工业株式会社 | 2024-05-10 | — | — | CN | disclosed |
| US-20240150934-A1 | POLYSILICON ROD AND METHOD FOR MANUFACTURING POLYSILICON ROD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-09 | — | — | US | disclosed |
| CN-106406021-B | Protective film and photomask assembly including the same | 三星电子株式会社 | 2021-09-14 | — | — | CN | disclosed |
| US-10281612-B2 | Methods for working and sensing synthetic quartz glass substrate | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-05-07 | — | — | US | disclosed |
| CN-104934499-B | For processing and detecting the method for synthetic quartz glass substrate | 信越化学工业株式会社 | 2018-05-25 | — | — | CN | disclosed |
| EP-2942332-B1 | METHODS FOR WORKING AND SENSING SYNTHETIC QUARTZ GLASS SUBSTRATE | SHINETSU CHEMICAL CO (JP) | 2017-08-30 | — | — | EP | disclosed |
| US-20170123102-A1 | METHODS FOR WORKING AND SENSING SYNTHETIC QUARTZ GLASS SUBSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-04 | — | — | US | disclosed |
| US-9599746-B2 | Methods for working and sensing synthetic quartz glass substrate | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-03-21 | — | — | US | disclosed |
| US-9240504-B2 | Solar cell and method of manufacturing the same | PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. (JP) | 2016-01-19 | — | — | US | disclosed |
| EP-2942332-A1 | METHODS FOR WORKING AND SENSING SYNTHETIC QUARTZ GLASS SUBSTRATE | Shin-Etsu Chemical Co., Ltd. (JP) | 2015-11-11 | — | — | EP | disclosed |
| CN-100530538-C | Post plasma clean process for a hardmask | TEXAS INSTRUMENTS INC (US) | 2009-08-19 | — | — | CN | disclosed |
| CN-101295645-A | MOS transistor with Y-type metal gate and its process | LIANHUA ELECTRONIC CO LTD (CN) | 2008-10-29 | — | — | CN | disclosed |
| US-20080038856-A1 | Semiconductor device and method of fabricating the same | MATSUSHITA ELECTRONICS CORPORATION (JP) | 2008-02-14 | — | — | US | disclosed |
| US-7285806-B2 | Semiconductor device having an active region formed from group III nitride | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-10-23 | — | — | US | disclosed |
| US-20060141701-A1 | Semiconductor device having trench capacitors and method for making the trench capacitors | KABUSHIKI KAISHA TOSHIBA | 2006-06-29 | — | — | US | disclosed |
| CN-1610059-A | Post plasma clean process for a hardmask | TEXAS INSTRUMENTS INC (US) | 2005-04-27 | — | — | CN | disclosed |
| US-20050006686-A1 | Semiconductor device having trench capacitors and method for making the trench capacitors | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-01-13 | — | — | US | disclosed |
| US-20030205721-A1 | Semiconductor device having an active region formed from group III nitride | PANASONIC CORPORATION (JP) | 2003-11-06 | — | — | US | disclosed |
| EP-1137072-A2 | Semiconductor device comprising a group III / nitride material and method of fabricating the same | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2001-09-26 | — | — | EP | disclosed |
| US-6083354-A | Treatment method for diamonds | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2000-07-04 | — | — | US | disclosed |