⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28286027 | 1.00 | — | — | |
| SCHEMBL27633229 | 1.00 | — | — | |
| SCHEMBL3884264 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL6707374 | 0.82 | — | — | |
| SCHEMBL9316049 | 0.82 | — | — | |
| Methane SCHEMBL11150033 | 0.82 | — | — | |
| SCHEMBL6526568 | 0.82 | — | — | |
| Water SCHEMBL8832646 | 0.82 | — | — | |
| SCHEMBL8200832 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL10492944 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 6381 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260032985-A1 | SELECTIVE DEPOSITION OF HIGH-K DIELECTRIC MATERIAL IN GATE INTERFACE | APPLIED MATERIALS INC (US) | 2026-01-29 | — | — | US | claimed |
| US-20250364405-A1 | BACK END OF LINE RESISTOR STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-27 | — | — | US | claimed |
| US-20250359287-A1 | SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | claimed |
| US-20250301731-A1 | GATE STRUCTURES OF NANOSTRUCTURE FIELD-EFFECT TRANSISTORS (NANO-FETS) INCLUDING A PLURALITY OF SEMICONDUCTOR BASED CAPPING MATERIALS AND METHODS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-09-25 | — | — | US | claimed |
| US-12426324-B2 | Gates structures of nanostructure field-effect transistors (nano-FETs) including a plurality of semiconductor based capping materials and methods of forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-09-23 | — | — | US | claimed |
| US-20250221001-A1 | Multi-Gate Transistor Structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-07-03 | — | — | US | claimed |
| CN-117465079-B | Aluminum-tantalum composite board and preparation method thereof | 济南大学 | 2025-06-13 | — | — | CN | claimed |
| CN-120138408-A | Preparation method of tantalum-aluminum alloy sputtering target material | 宁波江丰电子材料股份有限公司 | 2025-06-13 | — | — | CN | claimed |
| CN-120079814-A | Preparation method of Ti60 high-temperature titanium alloy cast ingot | 新疆湘润新材料科技有限公司 | 2025-06-03 | — | — | CN | claimed |
| CN-120079813-A | Preparation method of Ti65 titanium alloy cast ingot | 新疆湘润新材料科技有限公司 | 2025-06-03 | — | — | CN | claimed |
| EP-0420589-B1 | Process for forming deposited film and process for preparing semiconductor device | CANON KK (JP) | 1996-02-07 | — | — | EP | claimed |
| EP-0603782-A2 | Method for producing a thin film resistor | CANON KABUSHIKI KAISHA (JP) | 1994-06-29 | — | — | EP | claimed |
| US-5322594-A | Depositing sacrificial material on insulator elements to define jet chambers and transport chambers | XEROX CORPORATION (US) | 1994-06-21 | — | — | US | claimed |
| US-5187500-A | CONTROL OF ENERGY TO THERMAL INKJET HEATING ELEMENTS | HEWLETT-PACKARD COMPANY (US) | 1993-02-16 | — | — | US | claimed |
| EP-0475235-A1 | Control of energy to thermal ink jet heating elements | Hewlett-Packard Company (US) | 1992-03-18 | — | — | EP | claimed |
| US-5016024-A | Integral ink jet print head | HEWLETT-PACKARD COMPANY (US) | 1991-05-14 | — | — | US | claimed |
| US-4965611-A | Amorphous diffusion barrier for thermal ink jet print heads | HEWLETT-PACKARD COMPANY (US) | 1990-10-23 | — | — | US | claimed |
| CN-85105468-A | The pre-brush plating method for brazing of welding-resistant metal | — | 1987-01-14 | — | — | CN | claimed |
| US-3997411-A | Method for the production of a thin film electric circuit | SIEMENS AKTIENGESELLSCHAFT (DT) | 1976-12-14 | — | — | US | claimed |
| US-3973106-A | Thin film thermal print head | HEWLETT-PACKARD COMPANY (US) | 1976-08-03 | — | — | US | claimed |