SCHEMBL718002

SCHEMBL718002

C=Cc1ccc(C=COC(C)=O)cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.42
CYP3A4 P08684 2/20 0.40
MAPT P10636 2/20 0.40
KDM4E B2RXH2 1/20 0.40
MEN1 O00255 1/20 0.40
LMNA P02545 1/20 0.40
TTR P02766 1/20 0.40
TP53 P04637 1/20 0.40
KMT2A Q03164 1/20 0.40
SMN1; SMN2 Q16637 1/20 0.40
TDP1 Q9NUW8 2/20 0.38
CYP19A1 P11511 1/20 0.37
F3 P13726 1/20 0.35
TAS1R3 Q7RTX0 2/20 0.35
TAS1R1 Q7RTX1 2/20 0.35
HIF1A Q16665 1/20 0.35
EPAS1 Q99814 1/20 0.35
GLA P06280 1/20 0.34
TRPA1 O75762 1/20 0.34
CA12 O43570 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Styrene SCHEMBL9350030 0.91 ALDH1A1 (0.48) ALDH1A1CYP3A4MAPTKDM4EMEN1
SCHEMBL434268 0.82 CA12 (0.52) ALDH1A1CYP3A4MAPTKDM4EMEN1
SCHEMBL28124453 0.82 ALDH1A1 (0.48) ALDH1A1CYP3A4MAPTKDM4EMEN1
Propene SCHEMBL27727109 0.81 GLA (0.48) ALDH1A1MAPTMEN1LMNAKMT2A
SCHEMBL8767176 0.81 ALDH1A1 (0.42) ALDH1A1CYP3A4MAPTKDM4EMEN1
SCHEMBL10416320 0.81 KDM4E (0.40) CYP3A4MAPTKDM4EMEN1LMNA
Styrene SCHEMBL27739898 0.81 GLA (0.38) ALDH1A1CYP3A4MAPTKDM4EMEN1
SCHEMBL19923136 0.80 GLA (0.55) ALDH1A1MAPTMEN1LMNAKMT2A
SCHEMBL58005 0.80 GLA (0.55) ALDH1A1MAPTMEN1LMNAKMT2A
SCHEMBL2985370 0.80 GLA (0.55) ALDH1A1MAPTMEN1LMNAKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 101 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-121586750-A Composition for forming silicon-containing underlayer film for directional self-assembly 日产化学株式会社 2026-02-27 CN disclosed
US-20250206901-A1 BRUSH MATERIAL FOR SELF-ASSEMBLED FILM NISSAN CHEMICAL CORPORATION (JP) 2025-06-26 US disclosed
CN-120019330-A Underlying film material for self-assembled materials 日产化学株式会社 2025-05-16 CN disclosed
US-20250147413-A1 METHOD FOR PRODUCING STRUCTURE HAVING PHASE-SEPARATED STRUCTURE TOKYO OHKA KOGYO CO., LTD. (JP) 2025-05-08 US disclosed
US-20250101145-A1 BLOCK COPOLYMERS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES USING THE SAME KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 2025-03-27 US disclosed
WO-2025047871-A1 UNDERLAYER FILM MATERIAL FOR SELF-ASSEMBLED MATERIALS 日産化学株式会社 2025-03-06 WO disclosed
WO-2025041813-A1 COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ASSEMBLY 日産化学株式会社 2025-02-27 WO disclosed
US-20250011622-A1 BLOCK COPOLYMER, UNDERCOAT AGENT, RESIN COMPOSITION FOR FORMING PHASE-SEPARATED STRUCTURE, AND METHOD FOR PRODUCING STRUCTURE BODY INCLUDING PHASE-SEPARATED STRUCTURE TOKYO OHKA KOGYO CO LTD (JP) 2025-01-09 US disclosed
US-20250011616-A1 METHOD FOR PRODUCING STRUCTURE BODY INCLUDING PHASE-SEPARATED STRUCTURE, AND COMPOSITION TOKYO OHKA KOGYO CO LTD (JP) 2025-01-09 US disclosed
US-20240425694-A1 RESIN COMPOSITION FOR FORMING PHASE-SEPARATED STRUCTURE, AND METHOD FOR PRODUCING STRUCTURE BODY INCLUDING PHASE-SEPARATED STRUCTURE TOKYO OHKA KOGYO CO., LTD. (JP) 2024-12-26 US disclosed
US-20140234589-A1 METHODS OF PATTERNING BLOCK COPOLYMER LAYERS AND PATTERNED STRUCTURES SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-08-21 US disclosed
US-20140193614-A1 METHOD OF PATTERNING BLOCK COPOLYMER LAYER AND PATTERNED STRUCTURE Yonsei University, University - Industry Foundation(UIF) (KR) 2014-07-10 US disclosed
US-20140187054-A1 METHODS OF PATTERNING BLOCK COPOLYMER LAYERS SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-07-03 US disclosed
US-20140127626-A1 RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT WHICH IS USED FOR FORMATION OF GUIDE PATTERN, GUIDE PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN ON LAYER CONTAINING BLOCK COPOLYMER RIKEN (JP) 2014-05-08 US disclosed
US-20140113236-A1 SOLVENT DEVELOPABLE NEGATIVE RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN OF LAYER INCLUDING BLOCK COPOLYMER RIKEN (JP) 2014-04-24 US disclosed
US-20140030652-A1 PRIMER AND PATTERN FORMING METHOD FOR LAYER INCLUDING BLOCK COPOLYMER RIKEN (JP) 2014-01-30 US disclosed
US-20130313223-A1 METHOD FOR PRODUCING SUBSTRATE HAVING SURFACE NANOSTRUCTURE TOKYO OHKA KOGYO CO., LTD. (JP) 2013-11-28 US disclosed
US-20130240481-A1 BLOCK COPOLYMER-CONTAINING COMPOSITION AND METHOD OF REDUCING PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-19 US disclosed
US-20130210231-A1 METHOD OF FORMING CONTACT HOLE PATTERN RIKEN (JP) 2013-08-15 US disclosed
US-20120048738-A1 SUBSTRATE PROVIDED WITH METAL NANOSTRUCTURE ON SURFACE THEREOF AND METHOD OF PRODUCING THE SAME TOKYO OHKA KOGYO CO., LTD. (JP) 2012-03-01 US disclosed