⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7743047 | 0.67 | — | — | |
| SCHEMBL4842857 | 0.67 | — | — | |
| SCHEMBL10798475 | 0.67 | — | — | |
| SCHEMBL2286159 | 0.64 | — | — | |
| SCHEMBL30690410 | 0.62 | — | — | |
| SCHEMBL8594437 | 0.59 | — | — | |
| SCHEMBL3912214 | 0.59 | — | — | |
| SCHEMBL4842863 | 0.59 | — | — | |
| SCHEMBL8777519 | 0.59 | — | — | |
| SCHEMBL9556533 | 0.54 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 421 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4748968-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | Hansol Chemical Co., Ltd (KR) | 2026-05-27 | — | — | EP | claimed |
| US-12635431-B2 | High aspect ratio carbon layer etch with improved throughput and process window | TOKYO ELECTRON LIMITED (JP) | 2026-05-19 | — | — | US | claimed |
| US-20260130139-A1 | LOW TEMPERATURE SI-CONTAINING FILMS DEPOSITED FROM CHLOROSILANE AND AMINOSILANE REACTIONS | VERSUM MAT US LLC (US) | 2026-05-07 | — | — | US | claimed |
| EP-4667616-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | Hansol Chemical Co., Ltd (KR) | 2025-12-24 | — | — | EP | claimed |
| US-20250369114-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | HANSOL CHEMICAL CO LTD (KR) | 2025-12-04 | — | — | US | claimed |
| WO-2025226985-A1 | PASSIVATION OF POLYSILICON MATERIAL AND SELECTIVE DEPOSITION OF DIELECTRIC MATERIAL UTILIZING ALKYNES | VERSUM MATERIALS US, LLC (US) | 2025-10-30 | — | — | WO | claimed |
| US-20250232981-A1 | HIGH ASPECT RATIO CARBON LAYER ETCH WITH IMPROVED THROUGHPUT AND PROCESS WINDOW | TOKYO ELECTRON LIMITED (JP) | 2025-07-17 | — | — | US | claimed |
| WO-2025080587-A2 | SILICON-CONTAINING FILMS HAVING SURFACES MODIFIED FROM HALOGENATED SILICON-CONTAINING COMPOUNDS | VERSUM MATERIALS US, LLC (US) | 2025-04-17 | — | — | WO | claimed |
| WO-2025076009-A1 | SELECTIVE DEPOSITION OF SILICON CONTAINING FILMS UTILIZING ORGANOAMINOPOLYSILOXANES AND ORGANOAMINOPOLYSILAZANES | VERSUM MATERIALS US, LLC (US) | 2025-04-10 | — | — | WO | claimed |
| US-20250038003-A1 | LOW TEMPERATURE MOLYBDENUM DEPOSITION ASSISTED BY SILICON-CONTAINING REACTANTS | LAM RESEARCH CORPORATION (US) | 2025-01-30 | — | — | US | claimed |
| CN-1193932-C | Process for producing disilicone hexachloride | MITSUBISHI MATER IALS POLYCRYS (JP) | 2005-03-23 | — | — | CN | claimed |
| US-6846473-B2 | Process for producing hexachlorodisilane | MITSUBISHI MATERIALS POLYCRYSTALLINE SILICON CORPORATION (JP) | 2005-01-25 | — | — | US | claimed |
| EP-1392601-B1 | PROCESS FOR PREPARATION OF POLYCRYSTALLINE SILICON | HEMLOCK SEMICONDUCTOR CORP (US) | 2004-09-22 | — | — | EP | claimed |
| US-20040131528-A1 | Process for preparation of polycrystalline silicon | HEMLOCK SEMICONDUCTOR CORPORATION | 2004-07-08 | — | — | US | claimed |
| EP-1392601-A1 | PROCESS FOR PREPARATION OF POLYCRYSTALLINE SILICON | HEMLOCK SEMICONDUCTOR CORPORATION (US) | 2004-03-03 | — | — | EP | claimed |
| US-20030147798-A1 | Process for producing hexachlorodisilane | MITSUBISHI MATERIALS CORP. (JP) | 2003-08-07 | — | — | US | claimed |
| CN-1392862-A | Process for producing disilicone hexachloride | MITSUBISHI MATERIALS POLYCRYST (JP) | 2003-01-22 | — | — | CN | claimed |
| WO-2002100776-A1 | PROCESS FOR PREPARATION OF POLYCRYSTALLINE SILICON | HEMLOCK SEMICONDUCTOR CORPORATION (US) | 2002-12-19 | — | — | WO | claimed |
| US-20020187096-A1 | Reacting trichlorosilane with hydrogen to form silicon and an effluent mixture of tetrachlorosilane and possibly chlorinated disilane; hydrogenation of the tetrachlorosilane and conversion of the disilane to monosilanes. | HEMLOCK SEMICONDUCTOR CORPORATION | 2002-12-12 | — | — | US | claimed |
| EP-1264798-A1 | PROCESS FOR PRODUCING DISILICON HEXACHLORIDE | Mitsubishi Materials Polycrystalline Silicon Corporation (JP) | 2002-12-11 | — | — | EP | claimed |