SCHEMBL2286159

SCHEMBL2286159

Cl[SiH2][Si](Cl)(Cl)[Si](Cl)(Cl)Cl

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10700567 0.75
SCHEMBL7259666 0.72
SCHEMBL718700 0.64
SCHEMBL4842857 0.57
SCHEMBL7743047 0.57
SCHEMBL10798475 0.57
SCHEMBL2194932 0.56
SCHEMBL72016 0.54
SCHEMBL8777519 0.50
SCHEMBL27765889 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4667616-A1 METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR Hansol Chemical Co., Ltd (KR) 2025-12-24 EP claimed
US-20250369114-A1 METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR HANSOL CHEMICAL CO LTD (KR) 2025-12-04 US claimed
WO-2018149830-A1 METHOD FOR FORMING Si-CONTAINING FILM L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2018-08-23 WO claimed
EP-2030227-A2 METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES ASM America, Inc. (US) 2009-03-04 EP claimed
US-20080026149-A1 METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES ASM AMERICA, INC. (US) 2008-01-31 US claimed
WO-2007140375-A2 METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES ASM AMERICA, INC. (US) 2007-12-06 WO claimed
US-20260070792-A1 METHOD FOR PRODUCING HALOTRISILANE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-12 US disclosed
EP-4667616-A1 METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR Hansol Chemical Co., Ltd (KR) 2025-12-24 EP disclosed
US-20250369114-A1 METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR HANSOL CHEMICAL CO LTD (KR) 2025-12-04 US disclosed
US-20250059644-A1 SEMICONDUCTOR PROCESSING SYSTEM, A SEMICONDUCTOR PRECURSOR STORAGE VESSEL AND A METHOD OF FORMING A SILICON COMPRISING LAYER ASM IP HOLDING B.V. (NL) 2025-02-20 US disclosed
US-20240379347-A1 SELECTIVE DEPOSITION OF A MATERIAL COMPRISING SILICON AND NITROGEN ASM IP HOLDING B.V. (NL) 2024-11-14 US disclosed
WO-2018149830-A1 METHOD FOR FORMING Si-CONTAINING FILM L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2018-08-23 WO disclosed
US-20150080596-A1 Method Of Reducing A Halosilane Compound In A Micoreactor DOW CORNING CORPORATION 2015-03-19 US disclosed
US-8207039-B2 Method of manufacturing semiconductor device FUJITSU SEMICONDUCTOR LIMITED (JP) 2012-06-26 US disclosed
US-7994538-B2 Semiconductor device and method of manufacturing the same FUJITSU SEMICONDUCTOR LIMITED (JP) 2011-08-09 US disclosed
US-20100297821-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU SEMICONDUCTOR LIMITED (JP) 2010-11-25 US disclosed
US-20090095982-A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU MICROELECTRONICS LIMITED (JP) 2009-04-16 US disclosed
EP-2030227-A2 METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES ASM America, Inc. (US) 2009-03-04 EP disclosed
US-20080026149-A1 METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES ASM AMERICA, INC. (US) 2008-01-31 US disclosed
WO-2007140375-A2 METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES ASM AMERICA, INC. (US) 2007-12-06 WO disclosed