SCHEMBL7204316

SCHEMBL7204316

[CH2]C(=O)CC(C)(CC)CC

nearest known ligand 0.39

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
HMGCR P04035 1/20 0.38
CHRM1 P11229 1/20 0.38
TBXA2R P21731 1/20 0.38
ADRA1A P35348 1/20 0.38
TSHR P16473 2/20 0.36
CYP2D6 P10635 1/20 0.36
CYP2C19 P33261 1/20 0.36
HIF1A Q16665 1/20 0.36
ALDH1A1 P00352 1/20 0.35
TDP1 Q9NUW8 2/20 0.32
KDM4E B2RXH2 1/20 0.32
FFAR1 O14842 1/20 0.32
CPT2 P23786 1/20 0.32
TET2 Q6N021 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1419066 0.86 HMGCR (0.52) HMGCRCHRM1TBXA2RADRA1ATSHR
SCHEMBL1335602 0.80 HMGCR (0.52) HMGCRCHRM1TBXA2RADRA1ATSHR
SCHEMBL6363731 0.78
SCHEMBL14109353 0.78 HMGCR (0.50) HMGCRCHRM1TBXA2RADRA1ATSHR
SCHEMBL17933420 0.74 ALDH1A1 (0.42) HMGCRCHRM1TBXA2RADRA1ATSHR
SCHEMBL27647738 0.74 TSHR (0.41) HMGCRCHRM1TBXA2RADRA1ATSHR
SCHEMBL1262330 0.73
SCHEMBL11922837 0.72 HMGCR (0.44) HMGCRCHRM1TBXA2RADRA1ATSHR
SCHEMBL3495260 0.72 HMGCR (0.44) HMGCRCHRM1TBXA2RADRA1ATSHR
SCHEMBL4783944 0.72 HMGCR (0.44) HMGCRCHRM1TBXA2RADRA1ATSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6602647-B2 Photo acid generator with high transparency and excellent heat stability in a photoresist for lithography using far ultraviolet light, especially light of ArF excimer consists of a cyclic sulfonium compound with 2-oxo group NEC CORPORATION (JP) 2003-08-05 US disclosed
US-20020045122-A1 Sulfonium salt compound and resist composition and pattern forming method using the same NEC CORPORATION 2002-04-18 US disclosed
EP-1113334-A1 Sulfonium salt compound, resist composition comprising the same and pattern forming method using the composition NEC CORPORATION (JP) 2001-07-04 EP disclosed