SCHEMBL724788

SCHEMBL724788

c1cncc(CCCCc2cccnc2)c1

nearest known ligand 0.80

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.80
L3MBTL1 Q9Y468 1/20 0.80
HRH1 P35367 2/20 0.77
CYP2A6 P11509 1/20 0.76
TBXAS1 P24557 7/20 0.69
CHRNA7 P36544 2/20 0.68
HRH4 Q9H3N8 1/20 0.61
HRH3 Q9Y5N1 1/20 0.61
CYP1A2 P05177 2/20 0.58
CYP2D6 P10635 2/20 0.58

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29485675 1.00 TDP1 (0.80) TDP1L3MBTL1HRH1CYP2A6TBXAS1
SCHEMBL29485634 0.98 HRH1 (0.81) TDP1L3MBTL1HRH1CYP2A6TBXAS1
SCHEMBL3048356 0.98 HRH1 (0.81) TDP1L3MBTL1HRH1CYP2A6TBXAS1
SCHEMBL2845851 0.98 HRH1 (0.81) TDP1L3MBTL1HRH1CYP2A6TBXAS1
SCHEMBL8658187 0.98 HRH1 (0.81) TDP1L3MBTL1HRH1CYP2A6TBXAS1
SCHEMBL725483 0.98 HRH1 (0.81) TDP1L3MBTL1HRH1CYP2A6TBXAS1
SCHEMBL29485667 0.98 HRH1 (0.81) TDP1L3MBTL1HRH1CYP2A6TBXAS1
SCHEMBL2843094 0.95 CYP2A6 (0.76) TDP1L3MBTL1HRH1CYP2A6TBXAS1
SCHEMBL29485677 0.95 CYP2A6 (0.76) TDP1L3MBTL1HRH1CYP2A6TBXAS1
SCHEMBL8199794 0.93 TDP1 (0.71) TDP1L3MBTL1HRH1CYP2A6TBXAS1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11697884-B2 Copper deposition in wafer level packaging of integrated circuits MACDERMID ENTHONE INC. (US) 2023-07-11 US disclosed
US-20210388519-A1 Copper Deposition in Wafer Level Packaging of Integrated Circuits MACDERMID ENTHONE INC. 2021-12-16 US disclosed
US-11124888-B2 Copper deposition in wafer level packaging of integrated circuits MACDERMID ENTHONE INC. (US) 2021-09-21 US disclosed
EP-3229610-B1 FLAVOR COMPOSITIONS AND PET FOOD PRODUCTS CONTAINING THE SAME MARS INC (US) 2021-06-09 EP disclosed
EP-3504186-A1 COPPER DEPOSITION IN WAFER LEVEL PACKAGING OF INTEGRATED CIRCUITS MacDermid Enthone Inc. (US) 2019-07-03 EP disclosed
US-10221496-B2 Copper filling of through silicon vias MACDERMID ENTHONE INC. (US) 2019-03-05 US disclosed
US-20190003068-A9 COPPER FILLING OF THROUGH SILICON VIAS ENTHONE INC. (US) 2019-01-03 US disclosed
WO-2018226988-A1 PROCESS FOR FILLING VIAS IN THE MANUFACTURE OF MICROELECTRONICS MACDERMID ENTHONE INC. (US) 2018-12-13 WO disclosed
US-10103029-B2 Process for filling vias in the microelectronics MACDERMID ENTHONE INC. (US) 2018-10-16 US disclosed
WO-2018057590-A1 COPPER DEPOSITION IN WAFER LEVEL PACKAGING OF INTEGRATED CIRCUITS MACDERMID ENTHONE INC. (US) 2018-03-29 WO disclosed
WO-2011149965-A2 COPPER FILLING OF THROUGH SILICON VIAS ENTHONE INC. (US) 2011-12-01 WO disclosed
EP-2358926-A2 ELECTRODEPOSITION OF COPPER IN MICROELECTRONICS WITH DIPYRIDYL-BASED LEVELERS Enthone, Inc. (US) 2011-08-24 EP disclosed
US-7812252-B2 An n-type semiconductor electrode containing a dye; coating an carboxylic acid or sulfonic acid on an electrode; injecting an amine to effect a gelation and provide an anionic or cationic polymer which provides a heat resistant electrode; iodine-containing electrolyte; high energy efficiency KABUSHIKI KAISHA TOSHIBA (JP) 2010-10-12 US disclosed
US-7812252-B2 An n-type semiconductor electrode containing a dye; coating an carboxylic acid or sulfonic acid on an electrode; injecting an amine to effect a gelation and provide an anionic or cationic polymer which provides a heat resistant electrode; iodine-containing electrolyte; high energy efficiency KABUSHIKI KAISHA TOSHIBA (JP) 2010-10-12 US disclosed
WO-2010062822-A2 ELECTRODEPOSITION OF COPPER IN MICROELECTRONICS WITH DIPYRIDYL-BASED LEVELERS ENTHONE INC. (US) 2010-06-03 WO disclosed
US-20100126872-A1 ELECTRODEPOSITION OF COPPER IN MICROELECTRONICS WITH DIPYRIDYL-BASED LEVELERS ENTHONE, INC. (US) 2010-05-27 US disclosed
US-20070137702-A1 An n-type semiconductor electrode containing a dye; coating an carboxylic acid or sulfonic acid on an electrode; injecting an amine to effect a gelation and provide an anionic or cationic polymer which provides a heat resistant electrode; iodine-containing electrolyte; high energy efficiency MURAI SHINJI 2007-06-21 US disclosed
US-20070137702-A1 An n-type semiconductor electrode containing a dye; coating an carboxylic acid or sulfonic acid on an electrode; injecting an amine to effect a gelation and provide an anionic or cationic polymer which provides a heat resistant electrode; iodine-containing electrolyte; high energy efficiency MURAI SHINJI 2007-06-21 US disclosed
US-7196264-B2 Dye sensitized solar cell and method for manufacturing dye sensitized solar cell KABUSHIKI KAISHA TOSHIBA (JP) 2007-03-27 US disclosed
US-7196264-B2 Dye sensitized solar cell and method for manufacturing dye sensitized solar cell KABUSHIKI KAISHA TOSHIBA (JP) 2007-03-27 US disclosed