SCHEMBL728869

SCHEMBL728869

CO[SiH](OC)O[Si](C)(OC)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16594287 0.80
SCHEMBL17532711 0.75
SCHEMBL14247961 0.73
SCHEMBL11027763 0.73
SCHEMBL14518574 0.73
SCHEMBL5831314 0.71
SCHEMBL5831456 0.71
SCHEMBL6569721 0.71
SCHEMBL19043866 0.69
SCHEMBL17194079 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1482070-B1 MECHANICAL ENHANCER ADDITIVES FOR LOW DIELECTRIC FILMS AIR PROD & CHEM (US) 2015-11-11 EP claimed
US-20040241463-A1 Mechanical enhancer additives for low dielectric films VERSUM MATERIALS US, LLC 2004-12-02 US claimed
EP-1482070-A1 Mechanical enhancer additives for low dielectric films AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-12-01 EP claimed
EP-1482070-B1 MECHANICAL ENHANCER ADDITIVES FOR LOW DIELECTRIC FILMS AIR PROD & CHEM (US) 2015-11-11 EP disclosed
US-8137764-B2 organosilicate film formed by plasma-enhanced chemical vapor deposition from a first silicon-containing precursor that comprises from 3 to 4 Si O bonds per Si atom, from 0 to 1 of Si H, Si Br, and Si Cl bonds per Si atom and a second silicon-containing precursor comprises at least one Si C bond per Si AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-03-20 US disclosed
EP-2261390-A2 Mechanical enhancer additives for low dielectric films AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-12-15 EP disclosed
US-7235490-B2 Method of manufacturing semiconductor device KABUSHIKI KAISHA TOSHIBA (JP) 2007-06-26 US disclosed
US-7198886-B2 Method for forming pattern KABUSHIKI KAISHA TOSHIBA (JP) 2007-04-03 US disclosed
US-20040241463-A1 Mechanical enhancer additives for low dielectric films VERSUM MATERIALS US, LLC 2004-12-02 US disclosed
EP-1482070-A1 Mechanical enhancer additives for low dielectric films AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-12-01 EP disclosed