⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Charcoal, Activated SCHEMBL338651 | 0.87 | — | — | |
| Charcoal, Activated SCHEMBL12273483 | 0.87 | — | — | |
| Charcoal, Activated SCHEMBL818874 | 0.87 | — | — | |
| Charcoal, Activated SCHEMBL243366 | 0.87 | — | — | |
| Charcoal, Activated SCHEMBL10415937 | 0.87 | — | — | |
| SCHEMBL868855 | 0.87 | — | — | |
| Charcoal, Activated SCHEMBL7914220 | 0.75 | — | — | |
| SCHEMBL5013176 | 0.75 | — | — | |
| Charcoal, Activated SCHEMBL10623464 | 0.75 | — | — | |
| Charcoal, Activated SCHEMBL9068640 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20120070653-A1 | COATED ARTICLE AND METHOD FOR MAKING THE SAME | HON HAI PRECISION INDUSTRY CO., LTD. (TW) | 2012-03-22 | — | — | US | claimed |
| US-20120070653-A1 | COATED ARTICLE AND METHOD FOR MAKING THE SAME | HON HAI PRECISION INDUSTRY CO., LTD. (TW) | 2012-03-22 | — | — | US | disclosed |
| US-20120070653-A1 | COATED ARTICLE AND METHOD FOR MAKING THE SAME | HON HAI PRECISION INDUSTRY CO., LTD. (TW) | 2012-03-22 | — | — | US | disclosed |
| US-8137825-B2 | Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof | TOKUYAMA CORPORATION (JP) | 2012-03-20 | — | — | US | disclosed |
| US-20100215987-A1 | Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof | TOKUYAMA CORPORATION (JP) | 2010-08-26 | — | — | US | disclosed |
| EP-1918429-A1 | ALUMINUM NITRIDE SINGLE CRYSTAL FILM, ALUMINUM NITRIDE SINGLE CRYSTAL LAMINATED SUBSTRATE AND PROCESSES FOR PRODUCTION OF BOTH | Tokuyama Corporation (JP) | 2008-05-07 | — | — | EP | disclosed |
| US-7338555-B2 | Highly crystalline aluminum nitride multi-layered substrate and production process thereof | TOKUYAMA CORPORATION (JP) | 2008-03-04 | — | — | US | disclosed |
| US-7220314-B2 | Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device | THE CIRCLE FOR THE PROMOTION OF SCIENCE AND ENGINEERING (JP) | 2007-05-22 | — | — | US | disclosed |
| US-20050059257-A1 | Highly crystalline aluminum nitride multi-layered substrate and production process thereof | TOKYO INSTITUTE OF TECHNOLOGY (JP) | 2005-03-17 | — | — | US | disclosed |
| US-20040185666-A1 | Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device | THE CIRCLE FOR THE PROMOTION OF SCIENCE AND ENGINEERING | 2004-09-23 | — | — | US | disclosed |
| US-6744076-B2 | Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device | THE CIRCLE FOR THE PROMOTION OF SCIENCE AND ENGINEERING (JP) | 2004-06-01 | — | — | US | disclosed |
| US-20030176001-A1 | Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device | TOKYO INSTITUTE OF TECHNOLOGY (JP) | 2003-09-18 | — | — | US | disclosed |