⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9161914 | 0.83 | — | — | |
| SCHEMBL19816787 | 0.81 | — | — | |
| SCHEMBL7847088 | 0.80 | — | — | |
| SCHEMBL5413240 | 0.80 | — | — | |
| SCHEMBL16789738 | 0.77 | — | — | |
| SCHEMBL5421417 | 0.76 | — | — | |
| SCHEMBL25210771 | 0.75 | — | — | |
| SCHEMBL10038456 | 0.75 | ALDH1A1 (0.35) | — | |
| SCHEMBL10038455 | 0.75 | ALDH1A1 (0.43) | — | |
| SCHEMBL6445110 | 0.73 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 195 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3663301-B1 | BORON-CONTAINING COMPOUNDS, COMPOSITIONS, AND METHODS FOR THE DEPOSITION OF BORON CONTAINING FILMS | VERSUM MAT US LLC (US) | 2023-08-30 | — | — | EP | claimed |
| US-20220213129-A1 | SILICON OXIDE FILM, MATERIAL FOR GAS BARRIER FILM, AND METHOD FOR PRODUCING SILICON OXIDE FILM | SAGAMI CHEMICAL RESEARCH INSTITUTE (JP) | 2022-07-07 | — | — | US | claimed |
| US-11059920-B2 | Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions | BRIDGESTONE CORPORATION (JP) | 2021-07-13 | — | — | US | claimed |
| CN-107636852-B | Method for depositing porous organosilicate glass films for use as resistive random access memories | 弗萨姆材料美国有限责任公司 | 2021-06-25 | — | — | CN | claimed |
| US-10985013-B2 | Method and precursors for manufacturing 3D devices | VERSUM MATERIALS US, LLC (US) | 2021-04-20 | — | — | US | claimed |
| WO-2020209202-A1 | SILICON OXIDE FILM, MATERIAL FOR GAS BARRIER FILM, AND METHOD FOR MANUFACTURING SILICON OXIDE FILM | 東ソー株式会社 | 2020-10-15 | — | — | WO | claimed |
| CN-105845549-B | Method and precursor for manufacturing 3D devices | 弗萨姆材料美国有限责任公司 | 2020-03-03 | — | — | CN | claimed |
| US-20190304775-A1 | Method and Precursors for Manufacturing 3D Devices | VERSUM MATERIALS US, LLC (US) | 2019-10-03 | — | — | US | claimed |
| US-10354860-B2 | Method and precursors for manufacturing 3D devices | VERSUM MATERIALS US, LLC (US) | 2019-07-16 | — | — | US | claimed |
| US-20190169330-A1 | Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions | BRIDGESTONE CORPORATION (JP) | 2019-06-06 | — | — | US | claimed |
| CN-107636852-A | Method for depositing porous organosilicate glass films for use as resistive random access memories | 弗萨姆材料美国有限责任公司 | 2018-01-26 | — | — | CN | claimed |
| EP-3268997-A1 | PROCESS FOR DEPOSITING POROUS ORGANOSILICATE GLASS FILMS FOR USE AS RESISTIVE RANDOM ACCESS MEMORY | Versum Materials US, LLC (US) | 2018-01-17 | — | — | EP | claimed |
| WO-2016144960-A1 | PROCESS FOR DEPOSITING POROUS ORGANOSILICATE GLASS FILMS FOR USE AS RESISTIVE RANDOM ACCESS MEMORY | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-09-15 | — | — | WO | claimed |
| CN-105845549-A | Method and precursors for manufacturing 3D devices | 气体产品与化学公司 | 2016-08-10 | — | — | CN | claimed |
| US-20160225616-A1 | METHOD AND PRECURSORS FOR MANUFACTURING 3D DEVICES | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-08-04 | — | — | US | claimed |
| EP-3051001-A2 | METHOD AND PRECURSORS FOR MANUFACTURING 3D DEVICES | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-08-03 | — | — | EP | claimed |
| EP-1482070-B1 | MECHANICAL ENHANCER ADDITIVES FOR LOW DIELECTRIC FILMS | AIR PROD & CHEM (US) | 2015-11-11 | — | — | EP | claimed |
| US-8137764-B2 | organosilicate film formed by plasma-enhanced chemical vapor deposition from a first silicon-containing precursor that comprises from 3 to 4 Si O bonds per Si atom, from 0 to 1 of Si H, Si Br, and Si Cl bonds per Si atom and a second silicon-containing precursor comprises at least one Si C bond per Si | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2012-03-20 | — | — | US | claimed |
| US-20040241463-A1 | Mechanical enhancer additives for low dielectric films | VERSUM MATERIALS US, LLC | 2004-12-02 | — | — | US | claimed |
| EP-1482070-A1 | Mechanical enhancer additives for low dielectric films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2004-12-01 | — | — | EP | claimed |