SCHEMBL75118

SCHEMBL75118

[Ga+3].[In+3].[P-3].[P-3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13386903 1.00
SCHEMBL64296 0.87
SCHEMBL29273 0.87
SCHEMBL258636 0.87
SCHEMBL937425 0.87
SCHEMBL17159946 0.87
Arsenic SCHEMBL5376201 0.87
Zinc Ion SCHEMBL18280684 0.87
SCHEMBL8709356 0.87
SCHEMBL1401491 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 20141 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114424417-B Method, system and apparatus for higher order mode suppression NLIGHT, INC. (US) 2026-05-26 CN claimed
CN-122073908-A Dual-band light emitting diode and method of manufacturing the same 台亚半导体股份有限公司 2026-05-22 CN claimed
WO-2026101991-A1 INTEGRATION OF COMPOUND SEMICONDUCTOR THIN FILM STRUCTURES ON LARGE-DIAMETER SUBSTRATES WITH WAFER BONDING AND SUBSTRATE REMOVAL Aeluma, Inc. (US) 2026-05-15 WO claimed
CN-122054661-A InGaP/GaAs heterojunction structure and preparation method thereof 西安唐晶量子科技有限公司 2026-05-15 CN claimed
CN-122054679-A Semiconductor device design with capped semiconductor layer 台湾积体电路制造股份有限公司 2026-05-15 CN claimed
US-12604558-B2 Light detecting device having a gradient layer with multiple sublayers LANDMARK OPTOELECTRONICS CORPORATION (TW) 2026-04-14 US claimed
US-12604655-B2 Polymer, quantum dot composition and light-emitting device employing the same INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) 2026-04-14 US claimed
US-12593515-B2 Multijunction solar cell SOLAERO TECHNOLOGIES CORP. (US) 2026-03-31 US claimed
US-20260088584-A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF TAIWAN ASIA SEMICONDUCTOR CORP (TW) 2026-03-26 US claimed
EP-4716035-A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Taiwan-Asia Semiconductor Corporation (TW) 2026-03-25 EP claimed
US-4773063-A Optical wavelength division multiplexing/demultiplexing system UNIVERSITY OF DELAWARE (US) 1988-09-20 US claimed
EP-0130774-B1 PROCESS FOR FABRICATING BIPOLAR TRANSISTOR FUJITSU LIMITED (JP) 1987-09-16 EP claimed
US-4610731-A SEMICONDUCTORS, DOPES AT&T BELL LABORATORIES (US) 1986-09-09 US claimed
EP-0130774-A1 Process for fabricating bipolar transistor FUJITSU LIMITED (JP) 1985-01-09 EP claimed
US-4474829-A Low-temperature charge-free process for forming native oxide layers HUGHES AIRCRAFT COMPANY (US) 1984-10-02 US claimed
US-4383872-A Method of growing a doped III-V alloy layer by molecular beam epitaxy utilizing a supplemental molecular beam of lead U.S. PHILIPS CORPORATION (US) 1983-05-17 US claimed
EP-0031180-A2 Method of growing a doped III-V alloy layer by molecular beam epitaxy and a semiconductor device comprising a semiconductor substrate bearing an epitaxial layer of a doped III-V alloy grown by such a method PHILIPS ELECTRONICS UK LIMITED (GB) 1981-07-01 EP claimed
US-4116733-A SEMICONDUCTORS RCA CORPORATION (US) 1978-09-26 US claimed
US-4019082-A Electron emitting device and method of making the same RCA CORPORATION (US) 1977-04-19 US claimed
US-3932883-A Photocathodes The British Secretary of State for Defense (EN) 1976-01-13 US claimed