SCHEMBL29273

SCHEMBL29273

[Al+3].[Ga+3].[In+3].[P-3].[P-3].[P-3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8709356 1.00
SCHEMBL107610 0.89
SCHEMBL9405435 0.89
SCHEMBL766543 0.89
SCHEMBL19511662 0.89
SCHEMBL75118 0.87
SCHEMBL297438 0.87
SCHEMBL133490 0.87
SCHEMBL13386903 0.87
SCHEMBL870035 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 7362 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12034277-B2 Semiconductor layer structure with a thin blocking layer LUMENTUM OPERATIONS LLC (US) 2024-07-09 US claimed
WO-2024138562-A1 IMAGE PROJECTION DEVICE GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP., LTD. (CN) 2024-07-04 WO claimed
US-12027639-B2 Multijunction solar cells SOLAERO TECHNOLOGIES CORP. (US) 2024-07-02 US claimed
US-20240213407-A1 LIGHT-EMITTING DIODE CHIP AND LIGHT-EMITTING DEVICE Quanzhou Sanan Semiconductor Technology Co., Ltd. (CN) 2024-06-27 US claimed
CN-118232161-A Semiconductor laser device 台亚半导体股份有限公司 2024-06-21 CN claimed
EP-4385945-A1 FLEXIBLE ARTIFICIAL LEAVES FOR HYDROGEN PRODUCTION King Abdullah University Of Science And Technology (SA) 2024-06-19 EP claimed
US-20240178348-A1 LIGHT-EMITTING DEVICE AND LIGHT-EMITTING APPARATUS TIANJIN SANAN OPTOELECTRONICS CO., LTD. (CN) 2024-05-30 US claimed
CN-118073496-A Light-emitting diode, preparation method thereof and display panel 重庆康佳光电技术研究院有限公司 2024-05-24 CN claimed
US-11973163-B2 Light emitting device and production method and use thereof TIANJIN SANAN OPTOELECTRONICS CO., LTD. (CN) 2024-04-30 US claimed
CN-110211950-B Light emitting device, preparation method of light emitting device and display device 深圳市思坦科技有限公司 2024-04-30 CN claimed
EP-0477719-B1 Etching of materials in a noncorrosive environment MOTOROLA INC (US) 1993-12-08 EP claimed
US-5204284-A Method of making a high band-gap opto-electronic device HEWLETT-PACKARD COMPANY (US) 1993-04-20 US claimed
US-5164798-A Diffusion control of P-N junction location in multilayer heterostructure light emitting devices HEWLETT-PACKARD COMPANY (US) 1992-11-17 US claimed
EP-0512429-A1 Semiconductor device for emitting highly spin-polarized electron beam DAIDO TOKUSHUKO KABUSHIKI KAISHA (JP) 1992-11-11 EP claimed
EP-0477719-A1 Etching of materials in a noncorrosive environment MOTOROLA, INC. (US) 1992-04-01 EP claimed
US-5068007-A Etching of materials in a noncorrosive environment MOTOROLA, INC. (US) 1991-11-26 US claimed
US-5060028-A HIGH BAND-GAP OPTO-ELECTRONIC DEVICE HEWLETT-PACKARD COMPANY (US) 1991-10-22 US claimed
EP-0378919-A2 High band-gap opto-electronic device and method for making same Hewlett-Packard Company (US) 1990-07-25 EP claimed
US-4499656-A Deep mesa process for fabricating monolithic integrated Schottky barrier diode for millimeter wave mixers SPERRY CORPORATION (US) 1985-02-19 US claimed
US-4467521-A Selective epitaxial growth of gallium arsenide with selective orientation SPERRY CORPORATION (US) 1984-08-28 US claimed