SCHEMBL7524739

SCHEMBL7524739

Cc1cc(O)c(C2CCCCC2)cc1-c1cc(C)c(-c2cc(C3CCCCC3)c(O)cc2C)c(O)c1O

nearest known ligand 0.38

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
HSP90AA1 P07900 1/20 0.38
BCL2L1 Q07817 2/20 0.37
NUDT1 P36639 1/20 0.35
BACE1 P56817 1/20 0.35
BCL2 P10415 1/20 0.33
MCL1 Q07820 1/20 0.33
BCL2A1 Q16548 1/20 0.33
KDM4E B2RXH2 1/20 0.32
MEN1 O00255 1/20 0.32
MAPT P10636 1/20 0.32
KMT2A Q03164 1/20 0.32
PSMB5 P28074 1/20 0.31
PTPN5 P54829 2/20 0.30
PTPN2 P17706 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7522760 0.86 HSP90AA1 (0.38) HSP90AA1BCL2L1NUDT1BACE1BCL2
SCHEMBL9137211 0.84 NUDT1 (0.34) HSP90AA1BCL2L1NUDT1BACE1BCL2
SCHEMBL3787021 0.84 NUDT1 (0.40) HSP90AA1BCL2L1NUDT1BACE1KDM4E
SCHEMBL3788958 0.82 NUDT1 (0.37) HSP90AA1BCL2L1NUDT1BACE1KDM4E
Ethane SCHEMBL28262859 0.81 NUDT1 (0.39) HSP90AA1BCL2L1NUDT1BACE1KDM4E
SCHEMBL18948598 0.80 NUDT1 (0.42) HSP90AA1NUDT1BACE1KDM4EMEN1
SCHEMBL3787886 0.78 NUDT1 (0.44) HSP90AA1NUDT1BACE1KDM4EMEN1
Ethane SCHEMBL28232501 0.78 HDAC4 (0.36) HSP90AA1NUDT1BACE1KDM4EMEN1
SCHEMBL5140179 0.77 HSP90AA1 (0.35) HSP90AA1NUDT1BACE1KDM4EMEN1
Orthocresol SCHEMBL15511894 0.77 NUDT1 (0.39) HSP90AA1NUDT1BACE1KDM4EMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5501936-A IMPROVED RESOLUTION OF VERY FINE PATTERNS TOKYO OHKA KOGYO CO., LTD. (JP) 1996-03-26 US claimed
US-5434031-A Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive TOKYO OHKA KOGYO CO., LTD. (JP) 1995-07-18 US claimed
EP-3896522-B1 PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2023-05-03 EP disclosed
EP-3896522-A1 PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2021-10-20 EP disclosed
US-10168617-B2 Composition for forming interlayer insulating film, interlayer insulating film, method for forming interlayer insulating film pattern, and device TOKYO OHKA KOGYO CO., LTD. (JP) 2019-01-01 US disclosed
US-10162260-B2 Photosensitive resin composition, protective film, and liquid crystal display element CHI MEI CORPORATION (TW) 2018-12-25 US disclosed
US-10156787-B2 Composition for forming interlayer insulating film, interlayer insulating film, method for forming interlayer insulating film pattern, and device TOKYO OHKA KOGYO CO., LTD. (JP) 2018-12-18 US disclosed
US-10067422-B2 Photosensitive resin composition for forming interlayer insulating film, interlayer insulating film, and method for forming interlayer insulating film TOKYO OHKA KOGYO CO. LTD. (JP) 2018-09-04 US disclosed
US-9851638-B2 Photosensitive polysiloxane composition and uses thereof CHI MEI CORPORATION (TW) 2017-12-26 US disclosed
US-20170285473-A1 COMPOSITION FOR FORMING INTERLAYER INSULATING FILM, INTERLAYER INSULATING FILM, METHOD FOR FORMING INTERLAYER INSULATING FILM PATTERN, AND DEVICE TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-05 US disclosed
US-20170285472-A1 COMPOSITION FOR FORMING INTERLAYER INSULATING FILM, INTERLAYER INSULATING FILM, METHOD FOR FORMING INTERLAYER INSULATING FILM PATTERN, AND DEVICE TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-05 US disclosed
EP-0848289-B1 Negative-working chemical sensitization photoresist composition TOKYO OHKA KOGYO CO LTD (JP) 2002-02-27 EP disclosed
EP-0848289-A1 Negative-working chemical sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-06-17 EP disclosed
US-5601961-A QUINONE DIAZIDE GROUP-CONTAINING COMPOUND AS PHOTOSENSITIZING AGENT, ALKALI-SOLUBLE RESINOUS INGREDIENT AS FILM-FORMING AGENT MADE FROM A BLEND OF AT LEAST TWO NOVOLAK-TYPE RESINS FROM M-AND P-CRESOL, A XYLENOL AND A TRIMETHYLPHENOL TOKYO OHKA KOGYO CO., LTD. (JP) 1997-02-11 US disclosed
US-5576138-A MIXTURE OF RESIN, PHOTOSENSITIZER AND BENZOPHENONE COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 1996-11-19 US disclosed
US-5501936-A IMPROVED RESOLUTION OF VERY FINE PATTERNS TOKYO OHKA KOGYO CO., LTD. (JP) 1996-03-26 US disclosed
US-5501936-A IMPROVED RESOLUTION OF VERY FINE PATTERNS TOKYO OHKA KOGYO CO., LTD. (JP) 1996-03-26 US disclosed
US-5478692-A Fine patterning for electronics TOKYO OHKA KOGYO CO., LTD. (JP) 1995-12-26 US disclosed
US-5434031-A Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive TOKYO OHKA KOGYO CO., LTD. (JP) 1995-07-18 US disclosed
US-5401605-A Positive working photosensitive resin composition containing 1,2-naphthoquinone diazide esterification product of triphenylmethane compound TOKYO OHKA KOGYO CO., LTD. (JP) 1995-03-28 US disclosed