Ammonia Solution, Strong

Ammonia Solution, Strong

SCHEMBL7568632

N.N[C@@H](CO[N+](=O)[O-])C(=O)O

nearest known ligand 0.41

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NOS1 P29475 3/20 0.39
PTGS1 P23219 1/20 0.38
SLC7A11 Q9UPY5 1/20 0.38
NOS3 P29474 2/20 0.37
NOS2 P35228 2/20 0.37
GRIA1 P42261 2/20 0.36
GRIA2 P42262 2/20 0.36
GRIA4 P48058 2/20 0.36
GRIK5 Q16478 2/20 0.36
SLC7A5 Q01650 1/20 0.35
GRM8 O00222 1/20 0.35
GRM6 O15303 1/20 0.35
GRIN2D O15399 1/20 0.35
GRIN3B O60391 1/20 0.35
GSR P00390 1/20 0.35
CYP1A2 P05177 1/20 0.35
GRIK1 P39086 1/20 0.35
GRM5 P41594 1/20 0.35
GRIA3 P42263 1/20 0.35
SLC1A3 P43003 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL457556 0.98 NOS1 (0.40) NOS1PTGS1SLC7A11NOS3NOS2
SCHEMBL457557 0.98 NOS1 (0.40) NOS1PTGS1SLC7A11NOS3NOS2
Nitric Acid SCHEMBL27650216 0.94 NOS1 (0.38) NOS1PTGS1SLC7A11NOS3NOS2
SCHEMBL456815 0.78 NOS1 (0.45) NOS1NOS3NOS2GRIA1GRIA2
Nitric Acid SCHEMBL457952 0.75 NOS1 (0.42) NOS1NOS3NOS2GRIA1GRIA2
Nitric Acid SCHEMBL457953 0.75 NOS1 (0.42) NOS1NOS3NOS2GRIA1GRIA2
SCHEMBL13397063 0.75 CA12 (0.41) NOS1NOS3NOS2SLC1A5
SCHEMBL13396930 0.75 CA12 (0.38) NOS1NOS3NOS2SLC1A5
SCHEMBL5154144 0.75 SLC1A1 (0.42) NOS1NOS3NOS2GRIA1GRIA2
SCHEMBL13397064 0.73 NOS1 (0.37) NOS1PTGS1NOS3NOS2SLC1A5

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20020177081-A1 Substrate for forming a resist pattern, process for producing the substrate and process for forming a resist pattern of the chemical amplification type ZEON CORPORATION (JP) 2002-11-28 US disclosed