SCHEMBL7594027

SCHEMBL7594027

COC(=O)/C=C(\C)O[Si](C)(C)C

nearest known ligand 0.40

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
HCAR2 Q8TDS4 2/20 0.40
KEAP1 Q14145 1/20 0.40
NFE2L2 Q16236 1/20 0.40
ALDH1A1 P00352 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
TSHR P16473 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2695530 1.00 HCAR2 (0.40) HCAR2KEAP1NFE2L2ALDH1A1SMN1; SMN2
SCHEMBL2695526 1.00 HCAR2 (0.40) HCAR2KEAP1NFE2L2ALDH1A1SMN1; SMN2
SCHEMBL7593497 0.79 HCAR2 (0.34) HCAR2KEAP1NFE2L2
SCHEMBL1471435 0.78 ALDH1A1 (0.30) ALDH1A1
SCHEMBL30018076 0.78 ALDH1A1 (0.30) ALDH1A1
SCHEMBL699911 0.78 ALDH1A1 (0.30) ALDH1A1
SCHEMBL9588257 0.78
SCHEMBL8822877 0.78
SCHEMBL8983231 0.78
SCHEMBL3968549 0.77

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0855621-B1 Manufacturing method and apparatus for semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2002-04-17 EP disclosed
EP-0837369-B1 Pattern formation method and surface treatment agent MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2001-12-19 EP disclosed
US-6174650-B1 FORMING RESIST FILM IN CLEAN ROOM BY CONDUCTING SURFACE TREATMENT ON SEMICONDUCTOR SUBSTRATE WITH SILANE COMPOUND; COATING SEMICONDUCTOR SUBSTRATE WITH CHEMICALLY AMPLIFIED RESIST; EXPOSING AND DEVELOPING MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2001-01-16 US disclosed
US-6133465-A IMPROVING THE ADHESION BETWEEN A SEMICONDUCTOR SUBSTRATE AND A RESIST PATTERN AS WELL AS PREVENTING AN INSOLUBLE SKIN LAYER FROM BEING FORMED ON THE SURFACE OF A RESIST PATTERN IN USING A CHEMICALLY AMPLIFIED RESIST MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2000-10-17 US disclosed
US-6074804-A Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2000-06-13 US disclosed
EP-0889367-A1 Method for forming a photoresist pattern Matsushita Electric Industrial Co., Ltd. (JP) 1999-01-07 EP disclosed
EP-0855621-A2 Manufacturing method and apparatus for semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1998-07-29 EP disclosed
EP-0855622-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1998-07-29 EP disclosed
EP-0837369-A1 Pattern formation method and surface treatment agent MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1998-04-22 EP disclosed