SCHEMBL7594074

SCHEMBL7594074

CC(C)(C)O[SiH2][SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8415361 0.72
SCHEMBL1286113 0.67
SCHEMBL21049673 0.67 ALDH1A1 (0.36)
SCHEMBL474807 0.67 ALDH1A1 (0.36)
SCHEMBL184295 0.65
SCHEMBL706367 0.64
SCHEMBL9147129 0.62
SCHEMBL6380568 0.61
SCHEMBL1900614 0.61
SCHEMBL1394215 0.61

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 184 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3495373-B1 HYDROCARBYLOXYDISILANES DOW SILICONES CORP (US) 2021-01-20 EP claimed
CN-110105383-A Oxyl disilane 美国陶氏有机硅公司 2019-08-09 CN claimed
US-4599393-A Method for polymerizing lactams and products obtained therefrom GENERAL ELECTRIC COMPANY (US) 1986-07-08 US claimed
US-20260150635-A1 INHIBITED ATOMIC LAYER DEPOSITION FOR PATTERNING APPLICATIONS LAM RESEARCH CORPORATION (US) 2026-05-28 US disclosed
CN-113921459-B Semiconductor element and method for manufacturing the same 南亚科技股份有限公司 2026-05-15 CN disclosed
CN-114388433-B Semiconductor device and method for manufacturing the same 南亚科技股份有限公司 2026-05-15 CN disclosed
CN-122029303-A Seamless gap filling by suppressed atomic layer deposition 朗姆研究公司 2026-05-12 CN disclosed
US-12622232-B2 Advanced self aligned multiple patterning using tin oxide LAM RESEARCH CORPORATION (US) 2026-05-05 US disclosed
US-20260098333-A1 INHIBITED OXIDE DEPOSITION FOR REFILLING SHALLOW TRENCH ISOLATION LAM RES CORP (US) 2026-04-09 US disclosed
US-12598930-B2 Conformal thermal CVD with controlled film properties and high deposition rate LAM RESEARCH CORPORATION (US) 2026-04-07 US disclosed
US-20260090294-A1 DOPED SILICON OR BORON LAYER FORMATION LAM RES CORP (US) 2026-03-26 US disclosed
US-20150044882-A1 FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE NOVELLUS SYSTEMS INC (US) 2015-02-12 US disclosed
US-20150004806-A1 LOW-K OXIDE DEPOSITION BY HYDROLYSIS AND CONDENSATION LAM RESEARCH CORPORATION 2015-01-01 US disclosed
US-8846536-B2 Flowable oxide film with tunable wet etch rate NOVELLUS SYSTEMS, INC. (US) 2014-09-30 US disclosed
US-20130230987-A1 FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE NOVELLUS SYSTEMS, INC. 2013-09-05 US disclosed
CN-102569165-A Bottom up fill in high aspect ratio trenches NOVELLUS SYSTEMS INC 2012-07-11 CN disclosed
US-20120161405-A1 SYSTEM AND APPARATUS FOR FLOWABLE DEPOSITION IN SEMICONDUCTOR FABRICATION NOVELLUS SYSTEMS, INC. 2012-06-28 US disclosed
US-20120149213-A1 BOTTOM UP FILL IN HIGH ASPECT RATIO TRENCHES NOVELLUS SYSTEMS, INC. 2012-06-14 US disclosed
US-20020158310-A1 Insulating film of semiconductor device and coating solution for forming insulating film and method of manufacturing insulating film KAWASAKI STEEL CORPORATION (JP) 2002-10-31 US disclosed
EP-0686680-A1 ISOLATION FILM OF SEMICONDUCTOR DEVICE, COATING FLUID FOR FORMING THE FILM, AND PROCESS FOR PRODUCING THE FILM KAWASAKI STEEL CORPORATION (JP) 1995-12-13 EP disclosed