SCHEMBL7657268

SCHEMBL7657268

C=CCOP(=O)(F)OF

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL898204 0.87 CYP3A4 (0.31)
SCHEMBL1008672 0.78
SCHEMBL1008805 0.78
SCHEMBL472808 0.77
SCHEMBL19348802 0.76
SCHEMBL87740 0.74
SCHEMBL1471538 0.74 ALDH1A1 (0.31)
SCHEMBL1009512 0.73
SCHEMBL19348800 0.73
SCHEMBL759915 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112745853-B Silicon nitride film etching solution and method for manufacturing semiconductor device using the same OCI有限公司 2024-03-26 CN claimed
CN-112824482-B Silicon nitride film etching solution and method for manufacturing semiconductor device using the same OCI有限公司 2024-03-26 CN claimed
CN-112779014-B Silicon nitride film etching solution and method for manufacturing semiconductor device using the same OCI有限公司 2024-01-09 CN claimed
CN-112521946-B Silicon nitride film etching solution and method for manufacturing semiconductor device using the same OCI有限公司 2023-12-22 CN claimed
CN-110655924-B Silicon substrate etching solution OCI有限公司 2022-11-04 CN claimed
CN-110655924-A Silicon substrate etching solution OCI有限公司 2020-01-07 CN claimed
US-10167425-B2 Etching solution capable of suppressing particle appearance OCI COMPANY LTD. (KR) 2019-01-01 US claimed
CN-107573940-A Silicon nitride film etching solution OCI有限公司 2018-01-12 CN claimed
CN-107345137-A The etching solution of particle appearance can be suppressed OCI有限公司 2017-11-14 CN claimed
US-20170321121-A1 ETCHING SOLUTION CAPABLE OF SUPPRESSING PARTICLE APPEARANCE OCI COMPANY LTD. (KR) 2017-11-09 US claimed
CN-112210378-B Silicon nitride film etching solution and preparation method thereof OCI有限公司 2024-04-12 CN disclosed
CN-112745853-B Silicon nitride film etching solution and method for manufacturing semiconductor device using the same OCI有限公司 2024-03-26 CN disclosed
CN-112824482-B Silicon nitride film etching solution and method for manufacturing semiconductor device using the same OCI有限公司 2024-03-26 CN disclosed
CN-112779014-B Silicon nitride film etching solution and method for manufacturing semiconductor device using the same OCI有限公司 2024-01-09 CN disclosed
CN-112521946-B Silicon nitride film etching solution and method for manufacturing semiconductor device using the same OCI有限公司 2023-12-22 CN disclosed
US-10167425-B2 Etching solution capable of suppressing particle appearance OCI COMPANY LTD. (KR) 2019-01-01 US disclosed
CN-107573940-A Silicon nitride film etching solution OCI有限公司 2018-01-12 CN disclosed
US-20170321121-A1 ETCHING SOLUTION CAPABLE OF SUPPRESSING PARTICLE APPEARANCE OCI COMPANY LTD. (KR) 2017-11-09 US disclosed
US-20160334701-A1 PHOTOCURABLE COMPOSITION FOR NANOIMPRINTING, AND METHOD FOR FORMING FINE PATTERN USING THE SAME DAICEL CORPORATION (JP) 2016-11-17 US disclosed
EP-1178050-A2 Fluoroalkylphosphates for use in electrochemical cells MERCK PATENT GmbH (DE) 2002-02-06 EP disclosed