⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18652005 | 0.72 | — | — | |
| SCHEMBL910399 | 0.72 | — | — | |
| SCHEMBL8498792 | 0.66 | — | — | |
| SCHEMBL8497369 | 0.66 | — | — | |
| SCHEMBL767031 | 0.66 | — | — | |
| SCHEMBL16264286 | 0.64 | — | — | |
| SCHEMBL14548254 | 0.64 | — | — | |
| SCHEMBL1425880 | 0.63 | — | — | |
| SCHEMBL13201615 | 0.63 | — | — | |
| SCHEMBL3152724 | 0.63 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 169 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240231230-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-20240201593-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2024-06-20 | — | — | US | disclosed |
| CN-118159910-A | Additive-containing silicon-containing resist underlayer film forming composition | 日产化学株式会社 | 2024-06-07 | — | — | CN | disclosed |
| US-20240162086-A1 | SUBSTRATE WITH THIN FILM, AND SEMICONDUCTOR SUBSTRATE | NISSAN CHEMICAL CORPORATION (JP) | 2024-05-16 | — | — | US | disclosed |
| CN-117940850-A | Composition for forming silicon-containing resist underlayer film, laminate using same, and method for producing semiconductor element | 日产化学株式会社 | 2024-04-26 | — | — | CN | disclosed |
| US-11966164-B2 | Semiconductor device production method employing silicon-containing resist underlayer film-forming composition including organic group having ammonium group | NISSAN CHEMICAL CORPORATION (JP) | 2024-04-23 | — | — | US | disclosed |
| US-11961636-B2 | Silica-containing insulating composition | NISSAN CHEMICAL CORPORATION (JP) | 2024-04-16 | — | — | US | disclosed |
| WO-2024063044-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2024-03-28 | — | — | WO | disclosed |
| US-20240069441-A1 | COMPOSITION FOR RESIST UNDERLYING FILM FORMATION | NISSAN CHEMICAL CORPORATION (JP) | 2024-02-29 | — | — | US | disclosed |
| US-11884839-B2 | Acetal-protected silanol group-containing polysiloxane composition | NISSAN CHEMICAL CORPORATION (JP) | 2024-01-30 | — | — | US | disclosed |
| US-20120178261-A1 | SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2012-07-12 | — | — | US | disclosed |
| US-20120070994-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2012-03-22 | — | — | US | disclosed |
| US-20110287369-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2011-11-24 | — | — | US | disclosed |
| EP-2372458-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM FORMATION COMPOSITION HAVING ANION GROUP | Nissan Chemical Industries, Ltd. (JP) | 2011-10-05 | — | — | EP | disclosed |
| US-20110143149-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2011-06-16 | — | — | US | disclosed |
| US-20100330505-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING CYCLIC AMINO GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2010-12-30 | — | — | US | disclosed |
| US-20100304305-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING POLYMER HAVING NITROGEN-CONTAINING SILYL GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20100291487-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING UREA GROUP | NISSAN CHEMICAL INDUSTRIES LTD. (JP) | 2010-11-18 | — | — | US | disclosed |
| EP-2249204-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING CYCLIC AMINO GROUP | Nissan Chemical Industries, Ltd. (JP) | 2010-11-10 | — | — | EP | disclosed |
| EP-2196854-A1 | COMPOSITION CONTAINING POLYMER HAVING NITROGENOUS SILYL GROUP FOR FORMING RESIST UNDERLAYER FILM | Nissan Chemical Industries, Ltd. (JP) | 2010-06-16 | — | — | EP | disclosed |