SCHEMBL7713843

SCHEMBL7713843

CC[SiH](C)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Propane SCHEMBL23701107 0.74
SCHEMBL705125 0.74
SCHEMBL7202178 0.70
SCHEMBL296998 0.67
SCHEMBL23701288 0.65
SCHEMBL702294 0.65
SCHEMBL702832 0.65
SCHEMBL8381790 0.63
Hydrochloric Acid SCHEMBL11804288 0.63
SCHEMBL5013312 0.63

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10626221-B2 Method of preparing organosiloxane DOW SILICONES CORPORATION (US) 2020-04-21 US disclosed
EP-3371244-B1 METHOD OF PREPARING ORGANOSILOXANE DOW SILICONES CORP (US) 2019-10-02 EP disclosed
US-20180312639-A1 METHOD OF PREPARING ORGANOSILOXANE DOW SILICONES CORPORATION 2018-11-01 US disclosed
US-20170283443-A1 FLUOROSILICON NITRILE COMPOUNDS ARKEMA INC. 2017-10-05 US disclosed
US-20160190486-A1 ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES UNIVERSAL DISPLAY CORPORATION (US) 2016-06-30 US disclosed
WO-2016032792-A1 FLUOROSILICON NITRILE COMPOUNDS ARKEMA INC. (US) 2016-03-03 WO disclosed
US-20140342533-A1 METHOD OF STRAIN AND DEFECT CONTROL IN THIN SEMICONDUCTOR FILMS APPLIED MATERIALS, INC. 2014-11-20 US disclosed
US-20130280891-A1 METHOD AND APPARATUS FOR GERMANIUM TIN ALLOY FORMATION BY THERMAL CVD APPLIED MATERIALS, INC. 2013-10-24 US disclosed
WO-2013158372-A1 METHOD AND APPARATUS FOR GERMANIUM TIN ALLOY FORMATION BY THERMAL CVD APPLIED MATERIALS, INC. (US) 2013-10-24 WO disclosed
US-6365528-B1 PROVIDING REACTOR HAVING A SEMICONDUCTOR SUBSTRATE MOUNTED ON A SUBSTRATE SUPPORT; FORMINGFLUORINE AND CARBON-CONTAINING SILICON OXIDE DIELECTRIC MATERIAL BY REACTING TOGETHER: OXIDIZER AND SILANE COMPOUND LSI LOGIC CORPORATION 2002-04-02 US disclosed