Known targets — ChEMBL curated mechanism
ACHEBDKRB2CHRM1CHRM2CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNGGUCY1A1GUCY1A2GUCY1B1GUCY1B2NAMPTPTAFRSLC10A2SLC6A2SLC6A3TACR1dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL829788 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL830957 | 0.87 | — | — | |
| Hydrochloric Acid SCHEMBL8326758 | 0.87 | — | — | |
| Hydrochloric Acid SCHEMBL830169 | 0.87 | — | — | |
| Hydrochloric Acid SCHEMBL6065995 | 0.87 | — | — | |
| Hydrochloric Acid SCHEMBL9813518 | 0.87 | — | — | |
| Hydrochloric Acid SCHEMBL9019483 | 0.87 | — | — | |
| SCHEMBL57479 | 0.82 | — | — | |
| SCHEMBL4106133 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL4799714 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-220288344-U | Polysilicon hydrogen chloride tail gas stepped energy-saving recovery system | 中石化南京工程有限公司 | 2024-01-02 | — | — | CN | claimed |
| EP-2243745-B1 | Method for making a chlorosilane | VERSUM MAT US LLC (US) | 2019-06-19 | — | — | EP | claimed |
| CN-106378133-A | Catalyst for producing trichlorosilane with silicon-hydrogen chlorination process, preparation method of catalyst and method for catalytically producing trichlorosilane | 中国科学院过程工程研究所 | 2017-02-08 | — | — | CN | claimed |
| WO-2011084427-A2 | METHODS AND SYSTEMS FOR PRODUCING SILICON, E.G., POLYSILICON, INCLUDING RECYCLING BYPRODUCTS | INTELLIGENT SOLAR, LLC (US) | 2011-07-14 | — | — | WO | claimed |
| EP-2243745-A2 | Method for making a chlorosilane | Air Products and Chemicals, Inc. (US) | 2010-10-27 | — | — | EP | claimed |
| JP-60215513-A | — | — | None | — | — | JP | disclosed |
| US-12622185-B2 | Method for manufacturing semiconductor silicon wafer composed of silicon wafer substrate and silicon monocrystalline epitaxial layer | GLOBALWAFERS JAPAN CO., LTD. (JP) | 2026-05-05 | — | — | US | disclosed |
| CN-120195760-A | Pipeline blockage detection method, system and computer readable storage medium | 西安奕斯伟材料科技股份有限公司 | 2025-06-24 | — | — | CN | disclosed |
| CN-119644615-A | Optical fiber interference structure, preparation method thereof, optical fiber modulator and optical modulation device | 北京航空航天大学 | 2025-03-18 | — | — | CN | disclosed |
| CN-220288344-U | Polysilicon hydrogen chloride tail gas stepped energy-saving recovery system | 中石化南京工程有限公司 | 2024-01-02 | — | — | CN | disclosed |
| CN-220288344-U | Polysilicon hydrogen chloride tail gas stepped energy-saving recovery system | 中石化南京工程有限公司 | 2024-01-02 | — | — | CN | disclosed |
| US-20230073641-A1 | MANUFACTURING METHOD FOR SEMICONDUCTOR SILICON WAFER | GLOBALWAFERS JAPAN CO., LTD. (JP) | 2023-03-09 | — | — | US | disclosed |
| EP-0036573-B1 | METHOD FOR MAKING A POLYSILICON CONDUCTOR STRUCTURE | International Business Machines Corporation (US) | 1986-10-22 | — | — | EP | disclosed |
| JP-S60215513-A | CONTINUOUS PREPARATION OF SILANE COMPOUND | DENKI KAGAKU KOGYO KK | 1985-10-28 | — | — | JP | disclosed |
| EP-0036144-B1 | METHOD FOR SELECTIVE REACTIVE ION ETCHING OF SILICON | International Business Machines Corporation (US) | 1983-08-10 | — | — | EP | disclosed |
| EP-0036573-A2 | Method for making a polysilicon conductor structure | International Business Machines Corporation (US) | 1981-09-30 | — | — | EP | disclosed |
| EP-0036111-A2 | Method for making fine deep dielectric isolation | International Business Machines Corporation (US) | 1981-09-23 | — | — | EP | disclosed |
| EP-0036144-A1 | Method for selective reactive ion etching of silicon | International Business Machines Corporation (US) | 1981-09-23 | — | — | EP | disclosed |
| US-4287661-A | Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1981-09-08 | — | — | US | disclosed |
| US-4274909-A | Method for forming ultra fine deep dielectric isolation | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1981-06-23 | — | — | US | disclosed |