⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ethane SCHEMBL2058527 | 0.72 | — | — | |
| Isobutane SCHEMBL25273675 | 0.72 | — | — | |
| Isobutane SCHEMBL1022735 | 0.71 | — | — | |
| Isobutane SCHEMBL11313074 | 0.71 | TSHR (0.50) | — | |
| Isobutane SCHEMBL2162423 | 0.71 | — | — | |
| Isobutane SCHEMBL768 | 0.71 | — | — | |
| Isobutane SCHEMBL30536981 | 0.71 | — | — | |
| SCHEMBL49524 | 0.71 | — | — | |
| Isobutane SCHEMBL20490082 | 0.71 | TSHR (0.50) | — | |
| Isobutane SCHEMBL7754023 | 0.71 | TSHR (0.50) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240170284-A1 | METHOD FOR PRODUCING A SILICON CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE | SOITEC (FR) | 2024-05-23 | — | — | US | disclosed |
| US-20240145294-A1 | METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE | SOITEC (FR) | 2024-05-02 | — | — | US | disclosed |
| EP-4305660-A1 | METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE | SOITEC (FR) | 2024-01-17 | — | — | EP | disclosed |
| EP-4305664-A1 | METHOD FOR PRODUCING A SILICON CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE | SOITEC (FR) | 2024-01-17 | — | — | EP | disclosed |
| CN-117083705-A | Method for producing silicon carbide-based semiconductor structures and intermediate composite structures | SOITEC公司 | 2023-11-17 | — | — | CN | disclosed |
| CN-116868312-A | Method for manufacturing silicon carbide-based semiconductor structure and intermediate composite structure | 索泰克公司 | 2023-10-10 | — | — | CN | disclosed |
| US-20230260841-A1 | METHOD FOR PRODUCING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER OF MONOCRYSTALLINE SIC ON A CARRIER SUBSTRATE OF POLYCRYSTALLINE SIC | SOITEC (FR) | 2023-08-17 | — | — | US | disclosed |
| WO-2022189732-A1 | METHOD FOR PRODUCING A SILICON CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE | SOITEC (FR) | 2022-09-15 | — | — | WO | disclosed |
| WO-2022189733-A1 | METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE | SOITEC (FR) | 2022-09-15 | — | — | WO | disclosed |
| EP-0747384-B1 | Process for the preparation of alkylhydrogenchlorosilanes | DEGUSSA (DE) | 2001-09-12 | — | — | EP | disclosed |
| US-5654459-A | VIA COMPROPORTIONATION OF ALKYLCHLOROSILANES WITH HYDROGENCHLOROSILANES IN THE PRESENCE OF A ZIRCONIUM AND/OR ALUMINUM CATALYST SATURATED WITH A HYDROGEN HALIDE; HIGH YIELD AND PURITY | HUELS AKTIENGESELLSCHAFT (DE) | 1997-08-05 | — | — | US | disclosed |
| EP-0747384-A1 | Process for the preparation of alkylhydrogenchlorosilanes | HÜLS AKTIENGESELLSCHAFT (DE) | 1996-12-11 | — | — | EP | disclosed |