⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9421787 | 1.00 | — | — | |
| SCHEMBL1895029 | 0.89 | — | — | |
| SCHEMBL10824466 | 0.89 | — | — | |
| SCHEMBL2803807 | 0.89 | — | — | |
| SCHEMBL5415465 | 0.89 | — | — | |
| Ammonia Solution, Strong SCHEMBL3277366 | 0.89 | — | — | |
| SCHEMBL13279759 | 0.89 | — | — | |
| SCHEMBL1895030 | 0.89 | — | — | |
| SCHEMBL2734608 | 0.89 | — | — | |
| SCHEMBL9234557 | 0.89 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 56818 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260146322-A1 | DEPOSITION METHODS USING PULSED PLASMA WITH VARYING PULSE FREQUENCY | TOKYO ELECTRON LIMITED (JP) | 2026-05-28 | — | — | US | claimed |
| US-20260150351-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-28 | — | — | US | claimed |
| US-20260150380-A1 | CONTINUOUS HIGH DOPANT CONCENTRATION IN EPITAXY REGIONS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-05-28 | — | — | US | claimed |
| US-20260150592-A1 | METHOD OF FORMING A SILICON ON INSULATOR SUBSTRATE | SK Hynix Inc. (KR) | 2026-05-28 | — | — | US | claimed |
| EP-4749710-A1 | SILICON-CARBON COMPOSITE MATERIAL CONTAINING CARBON NANOTUBES, AND PREPARATION METHOD THEREFOR AND USE THEREOF | Tianmulake Excellent Anode Materials Co, Ltd. (CN) | 2026-05-27 | — | — | EP | claimed |
| EP-4748968-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | Hansol Chemical Co., Ltd (KR) | 2026-05-27 | — | — | EP | claimed |
| EP-4750304-A1 | METHOD OF FORMING A SILICON ON INSULATOR SUBSTRATE | SK hynix Inc. (KR) | 2026-05-27 | — | — | EP | claimed |
| CN-122079120-A | Porous carbon, silicon-carbon anode material comprising porous carbon, and preparation method and application of porous carbon | — | 2026-05-26 | — | — | CN | claimed |
| CN-114695264-B | Semiconductor memory structure and method for filling conductive material in contact hole | INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES (CN) | 2026-05-26 | — | — | CN | claimed |
| CN-113948464-B | Field effect transistor device with gate spacer structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO.,LTD. (CN) | 2026-05-26 | — | — | CN | claimed |
| US-4113845-A | ION EXCHANGE | UNION CARBIDE CORPORATION (US) | 1978-09-12 | — | — | US | claimed |
| US-4085084-A | Silicone resins having good thermal stability | GENERAL ELECTRIC COMPANY (US) | 1978-04-18 | — | — | US | claimed |
| US-4082691-A | FOR AQUEOUS SYSTEMS | WITCO CHEMICAL CORPORATION (US) | 1978-04-04 | — | — | US | claimed |
| US-4038370-A | METHOD OF PRODUCING HIGH-PURITY TRANSPARENT VITREOUS SILICA | KOMATSU ELECTRONIC METALS CO., LTD. (JA) | 1977-07-26 | — | — | US | claimed |
| US-4038371-A | DISMUTATION OF TRICHLOROSILANE | RHONE-POULENC INDUSTRIES (FR) | 1977-07-26 | — | — | US | claimed |
| US-4018871-A | TO DICHLOROSILANE, N-SUBSTITUTED-A-PYRROLIDONE CATALYST | RHONE-POULENC INDUSTRIES (FR) | 1977-04-19 | — | — | US | claimed |
| US-4007050-A | OR METALLOIDS | DEUTSCHE GOLD- UND SILBER-SCHEIDEANSTALT VORMALS ROESSLER (DT) | 1977-02-08 | — | — | US | claimed |
| US-3980686-A | Process for the preparation of chlorosilane | RHONE-POULENC INDUSTRIES (FR) | 1976-09-14 | — | — | US | claimed |
| US-RE28818-E | WATER, REACTION PRODUCT OF PYROGENIC SILICA AND DIMETHYL DICHLOROSILANE | AKZONA INCORPORATED (US) | 1976-05-18 | — | — | US | claimed |
| US-3945864-A | Method of growing thick expitaxial layers of silicon | RCA CORPORATION (US) | 1976-03-23 | — | — | US | claimed |