⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29371232 | 1.00 | — | — | |
| SCHEMBL28251064 | 1.00 | — | — | |
| SCHEMBL28150308 | 1.00 | — | — | |
| SCHEMBL77845 | 1.00 | — | — | |
| SCHEMBL828559 | 0.82 | — | — | |
| SCHEMBL7060273 | 0.82 | — | — | |
| SCHEMBL3572110 | 0.82 | — | — | |
| SCHEMBL19181781 | 0.82 | — | — | |
| Water SCHEMBL21066928 | 0.82 | — | — | |
| SCHEMBL9716108 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 16007 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122079651-A | Preparation method of ultrahigh-temperature ceramic nanowire reinforced ceramic matrix composite material | — | 2026-05-26 | — | — | CN | claimed |
| CN-122028479-A | Semiconductor device with engineering gate dielectric stack and preparation method thereof | 赛晶亚太半导体科技(浙江)有限公司 | 2026-05-12 | — | — | CN | claimed |
| US-20260096468-A1 | SEMICONDUCTOR PACKAGE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-02 | — | — | US | claimed |
| US-20260090066-A1 | SEMICONDUCTOR DEVICE COMPRISING HIGH-K AMORPHOUS FLUORINATED CARBON THIN FILM GATE DIELECTRIC LAYER AND MANUFACTURING METHOD THEREOF | THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY (IAC) (KR) | 2026-03-26 | — | — | US | claimed |
| CN-121573990-A | Preparation method of low-residue silicon SiC composite material and preparation method of liquid phenolic resin | 太行国家实验室 | 2026-02-27 | — | — | CN | claimed |
| EP-4066025-B1 | PROJECTION ASSEMBLY FOR A HEAD-UP-DISPLAY (HUD) USING P-POLARISED LIGHT | SAINT GOBAIN SEKURIT FRANCE (FR) | 2026-02-18 | — | — | EP | claimed |
| EP-4248259-B1 | PROJECTION ASSEMBLY FOR A HEAD-UP DISPLAY (HUD) WITH P-POLARIZED IRRADIATION | SAINT GOBAIN SEKURIT FRANCE (FR) | 2026-01-07 | — | — | EP | claimed |
| US-12520567-B2 | Hybrid-channel nano-sheet FETs | ADEIA SEMICONDUCTOR SOLUTIONS LLC (US) | 2026-01-06 | — | — | US | claimed |
| US-12513939-B2 | Semiconductor device having a low-k gate side insulating layer | SK Hynix Inc. (KR) | 2025-12-30 | — | — | US | claimed |
| US-12507474-B2 | Input/output semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-12-23 | — | — | US | claimed |
| CN-1507062-A | Structure and manufacturing method of ROM with tunneling dielectric layer with high dielectric constant | 旺宏电子股份有限公司 | 2004-06-23 | — | — | CN | claimed |
| US-20040113206-A1 | Use of hafnium silicon oxynitride as the cap layer of the sidewall spacer | CHEN YUANNING | 2004-06-17 | — | — | US | claimed |
| US-20040099964-A1 | Use of hafnium silicon oxynitride as the cap layer of the sidewall spacer | CHEN YUANNING (US) | 2004-05-27 | — | — | US | claimed |
| US-20040094782-A1 | Use of hafnium silicon oxynitride as the cap layer of the sidewall spacer | TEXAS INSTRUMENTS INCORPORATED | 2004-05-20 | — | — | US | claimed |
| US-20030232501-A1 | Surface pre-treatment for enhancement of nucleation of high dielectric constant materials | APPLIED MATERIALS, INC. | 2003-12-18 | — | — | US | claimed |
| US-6630383-B1 | Bi-layer floating gate for improved work function between floating gate and a high-K dielectric layer | ADVANCED MICRO DEVICES, INC. | 2003-10-07 | — | — | US | claimed |
| US-6544906-B2 | Annealing of high-k dielectric materials | TEXAS INSTRUMENTS INCORPORATED | 2003-04-08 | — | — | US | claimed |
| US-20020081826-A1 | Annealing of high-K dielectric materials | TEXAS INSTRUMENTS INCORPORATED | 2002-06-27 | — | — | US | claimed |
| US-6395650-B1 | Methods for forming metal oxide layers with enhanced purity | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-05-28 | — | — | US | claimed |
| US-6299294-B1 | High efficiency printhead containing a novel oxynitride-based resistor system | HEWLETT-PACKARD COMPANY | 2001-10-09 | — | — | US | claimed |