Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL21821242 | 1.00 | — | — | |
| Water SCHEMBL20584551 | 0.87 | — | — | |
| Water SCHEMBL27728677 | 0.87 | — | — | |
| Methane SCHEMBL27970802 | 0.87 | — | — | |
| Water SCHEMBL19876570 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL27605013 | 0.87 | — | — | |
| Water SCHEMBL251541 | 0.82 | — | — | |
| Water SCHEMBL8055071 | 0.82 | — | — | |
| Water SCHEMBL20582743 | 0.82 | — | — | |
| Water SCHEMBL489954 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11955542-B2 | Semiconductor device | VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) | 2024-04-09 | — | — | US | claimed |
| CN-117337047-A | Integration method of embedded ferroelectric memory based on CMOS process flow | 北京大学 | 2024-01-02 | — | — | CN | claimed |
| CN-117337048-A | Ferroelectric memory and preparation method thereof | 北京大学 | 2024-01-02 | — | — | CN | claimed |
| US-11335593-B2 | Interconnect structure of semiconductor device including barrier layer located entirely in via | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-05-17 | — | — | US | claimed |
| CN-114203905-A | Method for manufacturing ferroelectric device | 北京超弦存储器研究院 | 2022-03-18 | — | — | CN | claimed |
| US-20210226048-A1 | SEMICONDUCTOR DEVICE | VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) | 2021-07-22 | — | — | US | claimed |
| US-10998434-B2 | Semiconductor device and method for forming the same | VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) | 2021-05-04 | — | — | US | claimed |
| CN-110527978-A | A kind of rear-earth-doped hafnium base ferroelectric material, preparation method and semiconductor devices | INST MICROELECTRONICS CAS | 2019-12-03 | — | — | CN | claimed |
| CN-110190111-A | A kind of multiple-grid three-dimensional manometer line transistor and preparation method thereof | 清华大学 | 2019-08-30 | — | — | CN | claimed |
| US-20190198654-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME | VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) | 2019-06-27 | — | — | US | claimed |
| CN-101651120-B | Method of manufacturing semiconductor device and semiconductor device | RENESAS TECH CORP | 2013-10-02 | — | — | CN | claimed |
| CN-102593351-A | Low-power-consumption resistive random access memory structure and manufacturing method thereof | UNIV BEIJING | 2012-07-18 | — | — | CN | claimed |
| CN-101651120-A | Method of manufacturing semiconductor device and semiconductor device | RENESAS TECH CORP JP | 2010-02-17 | — | — | CN | claimed |
| EP-4693294-A1 | MEMORY AND ELECTRONIC DEVICE | Huawei Technologies Co., Ltd. (CN) | 2026-02-11 | — | — | EP | disclosed |
| CN-119815829-A | Three-dimensional stacked access memory structure and integration method thereof | 北京大学 | 2025-04-11 | — | — | CN | disclosed |
| EP-4525022-A1 | MEMORY ARRAY AND MANUFACTURING METHOD THEREFOR, MEMORY, AND ELECTRONIC DEVICE | Huawei Technologies Co., Ltd. (CN) | 2025-03-19 | — | — | EP | disclosed |
| CN-101645446-A | Integrated circuit with dielectric layer | QIMONDA AG DE | 2010-02-10 | — | — | CN | disclosed |
| CN-100565795-C | Method for manufacturing charge storage device | IND TECH RES INST (CN) | 2009-12-02 | — | — | CN | disclosed |
| CN-101009216-A | Method for manufacturing charge storage device | IND TECH RES INST (CN) | 2007-08-01 | — | — | CN | disclosed |
| CN-1738058-A | Switching element of pixel electrode and manufacturing method thereof | AU OPTRONICS CORP (CN) | 2006-02-22 | — | — | CN | disclosed |