SCHEMBL782177

SCHEMBL782177

CC1=C(C)C(C)(C)C([Hf](C2=C(C)C(C)=C(C)C2(C)C)(C2=C(C)C(C)=C(C)C2(C)C)C2=C(C)C(C)=C(C)C2(C)C)=C1C

nearest known ligand 0.33

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
CTSD P07339 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8379127 0.80 CTSD (0.32) CTSD
SCHEMBL27435807 0.74
SCHEMBL1234015 0.74
SCHEMBL8384616 0.74
SCHEMBL2230540 0.73 CTSD (0.43) CTSD
Hydrochloric Acid SCHEMBL9077872 0.72
SCHEMBL8382371 0.71
Hydrochloric Acid SCHEMBL6914999 0.69
SCHEMBL4486040 0.68
SCHEMBL2784495 0.67 CTSD (0.36) CTSD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8866139-B2 Nonvolatile semiconductor memory device KABUSHIKI KAISHA TOSHIBA (JP) 2014-10-21 US disclosed
US-8569823-B2 Semiconductor device and manufacturing method thereof KABUSHIKI KAISHA TOSHIBA (JP) 2013-10-29 US disclosed
US-20130234130-A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE TOSHIBA MEMORY CORPORATION (JP) 2013-09-12 US disclosed
US-8390054-B2 Semiconductor memory element and semiconductor memory device KABUSHIKI KAISHA TOSHIBA (JP) 2013-03-05 US disclosed
US-20120068250-A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF TOSHIBA MEMORY CORPORATION (JP) 2012-03-22 US disclosed
US-20110241101-A1 SEMICONDUCTOR MEMORY ELEMENT AND SEMICONDUCTOR MEMORY DEVICE KABUSHIKI KAISHA TOSHIBA (JP) 2011-10-06 US disclosed