SCHEMBL785885

SCHEMBL785885

CC(C)(OC(=O)C1CC2CC1C1C3CCC(C3)C21)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15962036 0.86
SCHEMBL13551547 0.81
SCHEMBL785886 0.81 PREP (0.33)
SCHEMBL12645061 0.81
SCHEMBL112450 0.80 MEN1 (0.31)
SCHEMBL13563546 0.80
SCHEMBL14266970 0.77
SCHEMBL15935804 0.77 MEN1 (0.35)
SCHEMBL785846 0.77 POLB (0.37)
SCHEMBL30209936 0.76

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER MARUZEN PETROCHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-9546133-B2 Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2017-01-17 US disclosed
US-20160023992-A1 METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER MARUZEN PETROCHEMICAL CO., LTD. 2016-01-28 US disclosed
US-9216948-B2 Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2015-12-22 US disclosed
US-8859180-B2 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2014-10-14 US disclosed
US-8859180-B2 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2014-10-14 US disclosed
US-8759462-B2 Method for producing resist copolymer having low molecular weight MARUZEN PETROCHEMICAL CO., LTD. (JP) 2014-06-24 US disclosed
US-20130123446-A1 METHOD FOR PRODUCING RESIST COPOLYMER HAVING LOW MOLECULAR WEIGHT MARUZEN PETROCHEMICAL CO., LTD. (JP) 2013-05-16 US disclosed
US-8377625-B2 Method for producing a copolymer solution with a uniform concentration for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2013-02-19 US disclosed
US-20120271020-A1 METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER MARUZEN PETROCHEMICAL CO., LTD. (JP) 2012-10-25 US disclosed
US-20120071638-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2012-03-22 US disclosed
US-8067516-B2 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2011-11-29 US disclosed
US-8030419-B2 Process for producing polymer for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2011-10-04 US disclosed
US-7960494-B2 Copolymer for semiconductor lithography and process for producing the same MARUZEN PETROCHEMICAL CO., LTD. (JP) 2011-06-14 US disclosed
US-20100143842-A1 METHOD FOR PRODUCING A COPOLYMER SOLUTION WITH A UNIFORM CONCENTRATION FOR SEMICONDUCTOR LITHOGRAPHY MARUZEN PETROCHEMICAL CO., LTD. (JP) 2010-06-10 US disclosed
US-20100062371-A1 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD (JP) 2010-03-11 US disclosed
US-20100048848-A1 PROCESS FOR PRODUCING POLYMER FOR SEMICONDUCTOR LITHOGRAPHY MARUZEN PETROCHEMICAL CO., LTD. (JP) 2010-02-25 US disclosed
US-20100047710-A1 COPOLYMER FOR IMMERSION LITHOGRAPHY AND COMPOSITIONS MARUZEN PETROCHEMICAL CO., LTD (JP) 2010-02-25 US disclosed
US-20090306328-A1 COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME MARUZEN PETROCHEMICAL CO., LTD. (JP) 2009-12-10 US disclosed
US-20070269741-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2007-11-22 US disclosed