SCHEMBL786033

SCHEMBL786033

CCC(C)C(=O)OC1(CC)CCCCC1

nearest known ligand 0.34

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 3/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11946884 1.00 KDM4E (0.30) KDM4E
SCHEMBL824267 1.00 KDM4E (0.30) KDM4E
SCHEMBL786043 0.98 MME (0.30)
SCHEMBL14883967 0.90
SCHEMBL9241672 0.88
SCHEMBL6366839 0.86 CETP (0.31)
SCHEMBL12677520 0.86 USP2 (0.33)
SCHEMBL824304 0.85
SCHEMBL11955053 0.85 KDM4E (0.31) KDM4E
SCHEMBL9608666 0.85 KDM4E (0.31) KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 523 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11803122-B2 Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-31 US disclosed
US-20230314937-A1 METHOD FOR USING COMPOSITION COMPRISING CARBOXYLIC ACID ESTER, LITHOGRAPHY COMPOSITION COMPRISING CARBOXYLIC ACID ESTER, AND METHOD FOR MANUFACTURING RESIST PATTERN MERCK PATENT GMBH (DE) 2023-10-05 US disclosed
US-20230314943-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST FILM USING THE SAME MERCK PATENT GMBH (DE) 2023-10-05 US disclosed
WO-2023162552-A1 CHEMICALLY AMPLIFIED POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD FOR SUBSTRATE WITH TEMPLATE, AND PRODUCTION METHOD FOR PLATED ARTICLE 東京応化工業株式会社 2023-08-31 WO disclosed
WO-2023162551-A1 METHOD FOR PRODUCING PLATED SHAPED ARTICLE 東京応化工業株式会社 2023-08-31 WO disclosed
US-20230148344-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND METHOD FOR PRODUCING COMPOUND FUJIFILM CORPORATION (JP) 2023-05-11 US disclosed
WO-2021039654-A1 ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2021-03-04 WO disclosed
EP-3761117-A1 METHOD FOR MANUFACTURING PLATED MOLDED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2021-01-06 EP disclosed
EP-3514145-A1 IMIDAZOLE COMPOUND, METAL SURFACE TREATMENT LIQUID, METAL SURFACE TREATMENT METHOD, AND LAMINATE PRODUCTION METHOD Tokyo Ohka Kogyo Co., Ltd. (JP) 2019-07-24 EP disclosed
EP-3184511-B1 IMIDAZOLE COMPOUND, METAL SURFACE TREATMENT LIQUID, METAL SURFACE TREATMENT METHOD, AND LAMINATE PRODUCTION METHOD TOKYO OHKA KOGYO CO LTD (JP) 2019-03-20 EP disclosed
US-20080008961-A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-10 US disclosed
US-20080008959-A1 Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-10 US disclosed
US-20070269741-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2007-11-22 US disclosed
US-20070231738-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
US-20070231741-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070160929-A1 photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography SHIN-ETSU CHEMICAL CO., LTD. 2007-07-12 US disclosed
US-20070148594-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-06-28 US disclosed
US-20070149702-A1 Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-06-28 US disclosed
US-7157207-B2 Polymer, resist material and patterning processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning AFF1, FASN, FAR1 KDM4E 3540/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.