SCHEMBL824304

SCHEMBL824304

CCC(C)C(=O)OCC(=O)OC1(CC)CCCCC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL824350 0.98 ALDH1A1 (0.30)
SCHEMBL10226350 0.88 KDM4E (0.31)
SCHEMBL824373 0.88 CHRM2 (0.31)
SCHEMBL14489133 0.87
SCHEMBL10222877 0.86
SCHEMBL786033 0.85 KDM4E (0.30)
SCHEMBL824267 0.85 KDM4E (0.30)
SCHEMBL11946884 0.85 KDM4E (0.30)
SCHEMBL824264 0.85
SCHEMBL12705281 0.85

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 98 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
US-9568824-B2 Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-02-14 US disclosed
US-20160238930-A1 HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-18 US disclosed
EP-2482131-B1 Resist composition and patterning process using the same SHINETSU CHEMICAL CO (JP) 2016-06-22 EP disclosed
US-9256127-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-09 US disclosed
US-9235122-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-12 US disclosed
US-9235122-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-12 US disclosed
US-9223204-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern-forming method using the same FUJITSU CORPORATION (JP) 2015-12-29 US disclosed
US-20150323865-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-12 US disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-7556908-B2 Chemically amplified positive resist composition, (meth)acrylate derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-07 US disclosed
US-20090162788-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-25 US disclosed
US-20090162787-A1 NOVEL COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-25 US disclosed
US-20090142699-A1 FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-04 US disclosed
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-21 US disclosed
US-20090104563-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-23 US disclosed
US-20090098484-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-16 US disclosed
US-20090068591-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-12 US disclosed
US-20090068590-A1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-12 US disclosed
US-20090023097-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed