SCHEMBL786107

SCHEMBL786107

CCC(C)C(=O)OC1COC(=O)C1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTPN1 P18031 1/20 0.40
HMGCR P04035 6/20 0.36
CYP3A4 P08684 6/20 0.34
LMNA P02545 5/20 0.34
HIF1A Q16665 4/20 0.34
TSHR P16473 4/20 0.34
SMN1; SMN2 Q16637 4/20 0.34
ABCB11 O95342 3/20 0.34
KDM4E B2RXH2 2/20 0.34
ITGB2 P05107 2/20 0.34
ICAM1 P05362 2/20 0.34
PGR P06401 2/20 0.34
ABCB1 P08183 2/20 0.34
ADORA3 P0DMS8 2/20 0.34
MAPT P10636 2/20 0.34
ADRB3 P13945 2/20 0.34
ALOX15 P16050 2/20 0.34
ITGAL P20701 2/20 0.34
TACR2 P21452 2/20 0.34
TBXA2R P21731 2/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19052046 0.88 PTPN1 (0.40) PTPN1LMNAHIF1ATSHRHTT
SCHEMBL12405666 0.87 PTPN1 (0.36) PTPN1HMGCRCYP3A4LMNAHIF1A
SCHEMBL12973912 0.86 PTPN1 (0.38) PTPN1LMNASMN1; SMN2KDM4EMAPT
SCHEMBL9925264 0.83 PTPN1 (0.37) PTPN1LMNAKDM4EMAPTHTT
SCHEMBL18845371 0.83 PTPN1 (0.36) PTPN1LMNAKDM4EMAPTHTT
SCHEMBL12834881 0.81 PTPN1 (0.35) PTPN1LMNAKDM4EMAPTHTT
SCHEMBL13779883 0.78 PTPN1 (0.34) PTPN1HTT
SCHEMBL14560961 0.78 HMGCR (0.30) HMGCR
SCHEMBL318396 0.77 PTPN1 (0.33) PTPN1HMGCR
SCHEMBL12705143 0.77 PTPN1 (0.37) PTPN1HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 432 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230148344-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND METHOD FOR PRODUCING COMPOUND FUJIFILM CORPORATION (JP) 2023-05-11 US disclosed
EP-4129974-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE FUJIFILM Corporation (JP) 2023-02-08 EP disclosed
US-11009793-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-05-18 US disclosed
WO-2020045534-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND 富士フイルム株式会社 2020-03-05 WO disclosed
US-9790166-B2 Polymer, monomer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-17 US disclosed
US-9758609-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9758609-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
US-20170131635-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-11 US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-7214733-B2 Positive type resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-05-08 US disclosed
US-7192681-B2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 US disclosed
US-7192681-B2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7157207-B2 Polymer, resist material and patterning processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170131635-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS H1-2, H1-0, H1-4 PTPN1 2032/4885HMGCR 3869/4885CYP3A4 3381/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.