Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PTPN1 | P18031 | 1/20 | 0.37 |
| ▸ | HTT | P42858 | 1/20 | 0.35 |
| ▸ | IL6ST | P40189 | 1/20 | 0.33 |
| ▸ | XPO1 | O14980 | 1/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15529791 | 0.91 | PTPN1 (0.33) | PTPN1HTTLMNA | |
| SCHEMBL15530328 | 0.89 | SMN1; SMN2 (0.43) | PTPN1HTT | |
| SCHEMBL12834881 | 0.86 | PTPN1 (0.35) | PTPN1HTTXPO1KDM4ELMNA | |
| SCHEMBL318396 | 0.86 | PTPN1 (0.33) | PTPN1 | |
| SCHEMBL13779883 | 0.83 | PTPN1 (0.34) | PTPN1HTTXPO1 | |
| SCHEMBL19052046 | 0.83 | PTPN1 (0.40) | PTPN1HTTXPO1LMNA | |
| SCHEMBL786107 | 0.83 | PTPN1 (0.40) | PTPN1HTTKDM4ELMNAMAPT | |
| SCHEMBL12705143 | 0.82 | PTPN1 (0.37) | PTPN1HTTXPO1 | |
| SCHEMBL12973912 | 0.81 | PTPN1 (0.38) | PTPN1HTTXPO1KDM4ELMNA | |
| SCHEMBL26356327 | 0.81 | PTPN1 (0.36) | PTPN1HTTIL6ST |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11914300-B2 | Manufacturing method of semiconductor chip, and kit | FUJIFILM CORPORATION (JP) | 2024-02-27 | — | — | US | disclosed |
| WO-2021111912-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER, AND COMPOUND | JSR株式会社 | 2021-06-10 | — | — | WO | disclosed |
| WO-2021039391-A1 | ACTIVE LIGHT RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE | 富士フイルム株式会社 | 2021-03-04 | — | — | WO | disclosed |
| US-20190258168-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2019-08-22 | — | — | US | disclosed |
| US-20180217499-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-08-02 | — | — | US | disclosed |
| US-20180217503-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-08-02 | — | — | US | disclosed |
| US-9810981-B2 | Pattern formation method, etching method, electronic device manufacturing method, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-07 | — | — | US | disclosed |
| US-9551931-B2 | Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-8658343-B2 | Resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-02-25 | — | — | US | disclosed |
| US-8658343-B2 | Resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-02-25 | — | — | US | disclosed |
| US-20120148953-A1 | Resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120148953-A1 | Resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-8101341-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-24 | — | — | US | disclosed |
| US-8101341-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-24 | — | — | US | disclosed |
| US-7914965-B2 | Resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2011-03-29 | — | — | US | disclosed |
| US-20100297553-A1 | POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-11-25 | — | — | US | disclosed |
| US-20100178617-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-15 | — | — | US | disclosed |
| US-20100178617-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-15 | — | — | US | disclosed |
| US-7326509-B2 | Composition for forming anti-reflective coating for use in lithography | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2008-02-05 | — | — | US | disclosed |
| US-7273690-B2 | Positive resist composition for immersion exposure and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2007-09-25 | — | — | US | disclosed |