⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2734183 | 0.91 | — | — | |
| SCHEMBL9556533 | 0.68 | — | — | |
| SCHEMBL3912281 | 0.68 | — | — | |
| SCHEMBL9421787 | 0.67 | — | — | |
| SCHEMBL31388943 | 0.67 | — | — | |
| SCHEMBL535839 | 0.67 | — | — | |
| SCHEMBL49524 | 0.67 | — | — | |
| SCHEMBL1672412 | 0.63 | — | — | |
| SCHEMBL10824466 | 0.60 | — | — | |
| SCHEMBL13279759 | 0.60 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 470 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4748968-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | Hansol Chemical Co., Ltd (KR) | 2026-05-27 | — | — | EP | claimed |
| US-12635431-B2 | High aspect ratio carbon layer etch with improved throughput and process window | TOKYO ELECTRON LIMITED (JP) | 2026-05-19 | — | — | US | claimed |
| EP-4667616-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | Hansol Chemical Co., Ltd (KR) | 2025-12-24 | — | — | EP | claimed |
| US-20250369114-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | HANSOL CHEMICAL CO LTD (KR) | 2025-12-04 | — | — | US | claimed |
| US-20250232981-A1 | HIGH ASPECT RATIO CARBON LAYER ETCH WITH IMPROVED THROUGHPUT AND PROCESS WINDOW | TOKYO ELECTRON LIMITED (JP) | 2025-07-17 | — | — | US | claimed |
| CN-119823166-A | Preparation method of six-membered cyclic chiral disilicide compound | 中国科学技术大学 | 2025-04-15 | — | — | CN | claimed |
| US-20250059644-A1 | SEMICONDUCTOR PROCESSING SYSTEM, A SEMICONDUCTOR PRECURSOR STORAGE VESSEL AND A METHOD OF FORMING A SILICON COMPRISING LAYER | ASM IP HOLDING B.V. (NL) | 2025-02-20 | — | — | US | claimed |
| CN-119406325-A | Silane gas production system and method based on double-reaction rectifying tower | 乐山协鑫新能源科技有限公司 | 2025-02-11 | — | — | CN | claimed |
| US-20250038003-A1 | LOW TEMPERATURE MOLYBDENUM DEPOSITION ASSISTED BY SILICON-CONTAINING REACTANTS | LAM RESEARCH CORPORATION (US) | 2025-01-30 | — | — | US | claimed |
| WO-2025018802-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | 주식회사 한솔케미칼 | 2025-01-23 | — | — | WO | claimed |
| WO-2007140375-A2 | METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES | ASM AMERICA, INC. (US) | 2007-12-06 | — | — | WO | claimed |
| US-7105460-B2 | Nitrogen-free dielectric anti-reflective coating and hardmask | APPLIED MATERIALS (US) | 2006-09-12 | — | — | US | claimed |
| CN-1250556-C | Compound of diamine disilazane and preparation method | UNIV SHANGHAI JIAOTONG (CN) | 2006-04-12 | — | — | CN | claimed |
| CN-1240704-C | Compound of compound 1,4 diaza tetra silicon cyclonexane, and preparation method | UNIV SHANGHAI JIAOTONG (CN) | 2006-02-08 | — | — | CN | claimed |
| CN-1563016-A | Compound of compound 1,4 diaza tetra silicon cyclonexane, and preparation method | UNIV SHANGHAI JIAOTONG (CN) | 2005-01-12 | — | — | CN | claimed |
| CN-1562920-A | Compound of diamine disilazane and preparation method | UNIV SHANGHAI JIAOTONG (CN) | 2005-01-12 | — | — | CN | claimed |
| US-4923949-A | REACTING GRIGNARD REAGENT WITH 1,2-DIETHYNYLDISILANE FOLLOWED WITH 1,2-DICHLORODISILANE; ELECTROCONDUCTIVE | KANEGAFUCHI CHEMICAL INDUSTRY CO., LTD. (JP) | 1990-05-08 | — | — | US | claimed |
| WO-1990001515-A1 | ETHYNYLENE-DISILANYLENE COPOLYMERS AND METHOD OF PREPARING SAME | KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA (JP) | 1990-02-22 | — | — | WO | claimed |
| WO-1990001485-A1 | METHOD FOR PREPARING 1,2,5,6-TETRASILAOCTA-3,7-DIYNES | KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA (JP) | 1990-02-22 | — | — | WO | claimed |
| US-4845255-A | DICHLORODISILANE PLUS GRIGNARD REAGENT | KANEGAFUCHI CHEMICAL INDUSTRY CO., LTD. (JP) | 1989-07-04 | — | — | US | claimed |