SCHEMBL7935533

SCHEMBL7935533

[Ge].[Pt].[Si]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30509664 1.00
SCHEMBL30509660 0.87
SCHEMBL31474666 0.87
SCHEMBL6476212 0.87
SCHEMBL9246390 0.87
SCHEMBL29625783 0.87
SCHEMBL5378403 0.87
Charcoal, Activated SCHEMBL31474663 0.87
SCHEMBL6476217 0.87
SCHEMBL5088661 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6284609-B1 Method to fabricate a MOSFET using selective epitaxial growth to form lightly doped source/drain regions CHARTERED SEMICONDUCTOR MANUFACTURING LTD. (SG) 2001-09-04 US claimed
CN-115440594-B Semiconductor device and method for manufacturing the same 台湾积体电路制造股份有限公司 2026-05-12 CN disclosed
CN-114464617-A Semiconductor structure and method of forming a semiconductor device 台湾积体电路制造股份有限公司 2022-05-10 CN disclosed
US-6284609-B1 Method to fabricate a MOSFET using selective epitaxial growth to form lightly doped source/drain regions CHARTERED SEMICONDUCTOR MANUFACTURING LTD. (SG) 2001-09-04 US disclosed
US-6214680-B1 Method to fabricate a sub-quarter-micron MOSFET with lightly doped source/drain regions CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. (SG) 2001-04-10 US disclosed