⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6476212 | 1.00 | — | — | |
| SCHEMBL3480848 | 0.87 | — | — | |
| SCHEMBL7935533 | 0.87 | — | — | |
| SCHEMBL30509664 | 0.87 | — | — | |
| SCHEMBL1207928 | 0.87 | — | — | |
| SCHEMBL2027156 | 0.75 | — | — | |
| SCHEMBL31474666 | 0.75 | — | — | |
| SCHEMBL5378403 | 0.75 | — | — | |
| SCHEMBL11593625 | 0.75 | — | — | |
| Charcoal, Activated SCHEMBL31474668 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9589785-B2 | Cleaning method and composition in photolithography | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2017-03-07 | — | — | US | disclosed |
| US-20160059272-A1 | Cleaning Method And Composition In Photolithography | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-03-03 | — | — | US | disclosed |
| CN-100435271-C | Alignment method, method for manufacturing a semiconductor device, substrate for a semiconductor device, electronic equipment | SEIKO EPSON CORP (JP) | 2008-11-19 | — | — | CN | disclosed |
| CN-1645562-A | Alignment method, method for manufacturing a semiconductor device, substrate for a semiconductor device, electronic equipment | SEIKO EPSON CORP (JP) | 2005-07-27 | — | — | CN | disclosed |
| US-6905920-B2 | Method for fabrication of field-effect transistor to reduce defects at MOS interfaces formed at low temperature | SEIKO EPSON CORPORATION (JP) | 2005-06-14 | — | — | US | disclosed |
| US-6825069-B2 | System and method for fabricating a transistor by a low temperature heat treatment process | SEIKO EPSON CORPORATION (JP) | 2004-11-30 | — | — | US | disclosed |
| US-20030104646-A1 | System and method for fabricating a transistor | SEIKO EPSON CORPORATION (JP) | 2003-06-05 | — | — | US | disclosed |
| US-20020043691-A1 | Method for fabrication of field effect transistor | 138 EAST LCD ADVANCEMENTS LIMITED (IE) | 2002-04-18 | — | — | US | disclosed |
| EP-0731493-A2 | Method for formation of a polycrystalline semiconductor film | APPLIED KOMATSU TECHNOLOGY, INC. (JP) | 1996-09-11 | — | — | EP | disclosed |