SCHEMBL800271

SCHEMBL800271

CS(=O)(=O)C(S(C)(=O)=O)S(C)(=O)=O

nearest known ligand 0.46

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.46
CYP3A4 P08684 1/20 0.46
CA1 P00915 1/20 0.39
ALDH1A1 P00352 1/20 0.33
USP2 O75604 1/20 0.33
TSHR P16473 1/20 0.33
CA2 P00918 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL868046 0.76 KDM4E (0.33) KDM4ECYP3A4CA2
SCHEMBL92892 0.70
SCHEMBL11109760 0.70
SCHEMBL11374297 0.70
SCHEMBL29896471 0.68
SCHEMBL17322566 0.67
SCHEMBL1149141 0.67 KDM4E (0.42) KDM4ECYP3A4CA1ALDH1A1USP2
SCHEMBL245684 0.67
SCHEMBL6910515 0.67
SCHEMBL30896661 0.67 KDM4E (0.42) KDM4ECYP3A4CA1ALDH1A1USP2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115151591-B Composition, cured product, and method for producing cured product 株式会社艾迪科 2024-03-01 CN disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20230359119-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-09 US disclosed
US-20230359119-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-09 US disclosed
US-20230305393-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20230305394-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
CN-111699204-B Radical polymerization initiator, composition containing the same, cured product thereof, method for producing the same, and compound 株式会社ADEKA 2023-07-21 CN disclosed
WO-2023112893-A1 RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD 東京応化工業株式会社 2023-06-22 WO disclosed
US-20230152697-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-05-18 US disclosed
US-20230152697-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-05-18 US disclosed
EP-1439422-A1 METHOD OF FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-07-21 EP disclosed
US-20040101787-A1 Fine pattern forming method DAIKIN INDUSTRIES, LTD. (JP) 2004-05-27 US disclosed
EP-1413927-A1 METHOD FOR FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-04-28 EP disclosed
EP-1376230-A1 FINE PATTERN FORMING METHOD Semiconductor Leading Edge Technologies, Inc. (JP) 2004-01-02 EP disclosed
US-6054254-A COATING WITH PHOTORESISTS, EXPOSURE TO LIGHT, DEVELOPMENT KABUSHIKI KAISHA TOSHIBA (JP) 2000-04-25 US disclosed
EP-0707094-B1 Process for preparing perfluoroalkanesulfonyl fluorides MINNESOTA MINING & MFG (US) 1998-07-22 EP disclosed
EP-0707094-A1 Process for preparing perfluoroalkanesulfonyl fluorides MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1996-04-17 EP disclosed
US-5486271-A Process for preparing perfluoroalkanesulfonyl fluorides MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1996-01-23 US disclosed
US-5372914-A Pattern forming method KABUSHIKI KAISHA TOSHIBA (JP) 1994-12-13 US disclosed
US-5348838-A Photoresist KABUSHIKI KAISHA TOSHIBA (JP) 1994-09-20 US disclosed