Butyric Acid

Butyric Acid

SCHEMBL8027475

CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-].CCCC(=O)[O-].CCCC(=O)[O-].CCCC(=O)[O-].CCCC(=O)[O-].CCCC(=O)[O-].CCCC(=O)[O-].CCCC(=O)[O-].CCCC(=O)[O-].[Ti+4].[Ti+4].[Ti+4]

nearest known ligand 0.74

Full drug profile on Sugi Atlas →

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
FFAR3 O14843 3/20 0.74
HDAC3 O15379 3/20 0.74
HDAC1 Q13547 3/20 0.74
HDAC2 Q92769 3/20 0.74
HDAC8 Q9BY41 3/20 0.74
CA1 P00915 3/20 0.50
CES2 O00748 1/20 0.48
CES1 P23141 1/20 0.48
NFKB1 P19838 1/20 0.47
GPR84 Q9NQS5 1/20 0.45
CA2 P00918 3/20 0.43
BBOX1 O75936 2/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Butyric Acid SCHEMBL30879925 1.00 FFAR3 (0.74) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL6250020 0.95 FFAR3 (0.74) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL2230696 0.95 FFAR3 (0.74) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL8027476 0.95 FFAR3 (0.74) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL1035581 0.89 FFAR3 (0.82) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL31634767 0.89
Butyric Acid SCHEMBL60746 0.89 FFAR3 (0.93) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL1330878 0.83
Butyric Acid SCHEMBL11419652 0.83 FFAR3 (0.93) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL4292004 0.83 FFAR3 (1.00) FFAR3HDAC3HDAC1HDAC2HDAC8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6022814-A COATING A POLYSILOXANE/SILSESQUIOXANE ON THE SUBSTRATE; HEATING TO A TEMPERATURE RANGING FROM 250.DEGREE. C. TO THE GLASS TRANSITION POINT OF THE POLYMER; DIELECTRIC FILM OF LOW DENSITY AND A LARGE FREE VOLUME; HEAT RESISTANCE KABUSHIKI KAISHA TOSHIBA (JP) 2000-02-08 US disclosed