SCHEMBL8030823

SCHEMBL8030823

[Ar].[Si]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11435373 1.00
Hydrochloric Acid SCHEMBL28187252 0.82
Phosphine SCHEMBL10722948 0.82
Calcium SCHEMBL29768644 0.82
SCHEMBL28269724 0.82
SCHEMBL465227 0.71
SCHEMBL9335701 0.71
SCHEMBL10899494 0.71
SCHEMBL252004 0.71
SCHEMBL8089227 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119287524-A Preparation method of monocrystalline silicon argon annealed sheet for eliminating stress at positioning notch position 杭州中欣晶圆半导体股份有限公司 2025-01-10 CN claimed
CN-107525347-B Device for guaranteeing high-purity argon gas supply quality of monocrystalline silicon argon-rich tail gas purification 湖北和远气体股份有限公司 2023-05-05 CN claimed
EP-2959497-B1 METHOD OF FORMING A PATTERN IN A SAMPLE CENTRE NAT RECH SCIENT (FR) 2016-11-30 EP claimed
CN-1990380-B Technique for purifying and recovering argon gas by rare earth lanthanide series radical alloy degasser in single-crystal silicon preparation TIANJIN HUANYU ELECTRONIC MATERIAL CO LTD 2010-10-13 CN claimed
WO-2025055018-A1 POROUS THREE-DIMENSIONAL BATTERY NEGATIVE ELECTRODE MATERIAL PREPARED BY USING PALM EMPTY FRUIT BUNCHES, AND PREPARATION METHOD THEREFOR 萧明尧 2025-03-20 WO disclosed
WO-2025013661-A1 LIGHT-TRANSMITTING ARTICLE AND METHOD FOR IMPROVING ALKALI RESISTANCE OF LIGHT-TRANSMITTING ARTICLE 信越化学工業株式会社 2025-01-16 WO disclosed
CN-119287524-A Preparation method of monocrystalline silicon argon annealed sheet for eliminating stress at positioning notch position 杭州中欣晶圆半导体股份有限公司 2025-01-10 CN disclosed
CN-119287524-A Preparation method of monocrystalline silicon argon annealed sheet for eliminating stress at positioning notch position 杭州中欣晶圆半导体股份有限公司 2025-01-10 CN disclosed
CN-119287524-A Preparation method of monocrystalline silicon argon annealed sheet for eliminating stress at positioning notch position 杭州中欣晶圆半导体股份有限公司 2025-01-10 CN disclosed
CN-116995232-A Porous three-dimensional battery anode material manufactured by palm empty fruit strings and preparation method thereof 萧明尧 2023-11-03 CN disclosed
CN-107525347-B Device for guaranteeing high-purity argon gas supply quality of monocrystalline silicon argon-rich tail gas purification 湖北和远气体股份有限公司 2023-05-05 CN disclosed
CN-107525347-B Device for guaranteeing high-purity argon gas supply quality of monocrystalline silicon argon-rich tail gas purification 湖北和远气体股份有限公司 2023-05-05 CN disclosed
US-10998878-B2 Joined body of piezoelectric material substrate and support substrate NGK INSULATORS, LTD. 2021-05-04 US disclosed
US-20200373905-A1 JOINED BODY OF PIEZOELECTRIC MATERIAL SUBSTRATE AND SUPPORT SUBSTRATE NGK INSULATORS, LTD. (JP) 2020-11-26 US disclosed
CN-207886856-U Monocrystalline silicon vacuum dust filtering device 西安同大实业股份有限公司 2018-09-21 CN disclosed
CN-101979317-B Low-temperature ball milling preparation method for nano crystal silicon powder UNIV WUHAN TECH 2012-09-05 CN disclosed
CN-101979317-A Low-temperature ball milling preparation method for nano crystal silicon powder UNIV WUHAN TECH 2011-02-23 CN disclosed
CN-1990380-B Technique for purifying and recovering argon gas by rare earth lanthanide series radical alloy degasser in single-crystal silicon preparation TIANJIN HUANYU ELECTRONIC MATERIAL CO LTD 2010-10-13 CN disclosed
US-6093936-A Integrated circuit with isolation of field oxidation by noble gas implantation LSI LOGIC CORPORATION (US) 2000-07-25 US disclosed
US-4226643-A Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film RCA CORPORATION (US) 1980-10-07 US disclosed