SCHEMBL824359

SCHEMBL824359

CCOC(=O)CC(CC)(CC)OC(=O)C(C)(C)CC

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GAA P10253 2/20 0.39
MGAM O43451 1/20 0.39
SI P14410 1/20 0.39
MGAM2 Q2M2H8 1/20 0.39
ALDH1A1 P00352 3/20 0.36
TRPA1 O75762 1/20 0.36
HSD11B1 P28845 1/20 0.36
CYP4F2 P78329 2/20 0.35
CYP4A11 Q02928 2/20 0.35
GSK3A P49840 1/20 0.33
GSK3B P49841 1/20 0.33
CYP1A2 P05177 2/20 0.32
LMNA P02545 1/20 0.31
HSD17B10 Q99714 1/20 0.31
CYP2C9 P11712 1/20 0.31
CYP2C19 P33261 1/20 0.31
HTT P42858 1/20 0.31
ALOX15 P16050 1/20 0.30
SOAT1 P35610 1/20 0.30
MMP8 P22894 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15214081 0.85
SCHEMBL824343 0.83 HTT (0.34) HTT
SCHEMBL824294 0.81
SCHEMBL2740758 0.80 CYP4F2 (0.31) GAACYP4F2CYP4A11
SCHEMBL7023647 0.80 GAA (0.40) GAAMGAMSIMGAM2ALDH1A1
SCHEMBL824355 0.76
SCHEMBL14705534 0.76 GAA (0.43) GAAMGAMSIMGAM2ALDH1A1
SCHEMBL7023643 0.75 GAA (0.39) GAAMGAMSIMGAM2ALDH1A1
SCHEMBL15214087 0.74
SCHEMBL130722 0.74 CYP4F2 (0.55) GAAMGAMSIMGAM2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8518629-B2 Resist composition for immersion exposure and method of forming resist pattern using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2013-08-27 US disclosed
US-8142979-B2 Resist composition for immersion exposure and method of forming resist pattern using the same Tokyo Ohka Tokyo Co., Ltd. (JP) 2012-03-27 US disclosed
US-20090311627-A1 Resist composition for immersion exposure and method of forming resist pattern using the same TOKYO OHKA KOGYO CO., LTD. 2009-12-17 US disclosed