SCHEMBL825496

SCHEMBL825496

CCC(C)c1ccc(OC(C)(C)CC)cc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.47
TSHR P16473 2/20 0.47
GAA P10253 3/20 0.43
MAPT P10636 1/20 0.43
MEN1 O00255 1/20 0.40
KMT2A Q03164 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
SLC7A5 Q01650 1/20 0.39
NPC1 O15118 2/20 0.38
RAB9A P51151 2/20 0.38
HSP90AA1 P07900 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.37
CYP2C9 P11712 1/20 0.37
HPGD P15428 2/20 0.36
USP2 O75604 1/20 0.36
PKM P14618 1/20 0.36
ALOX15 P16050 1/20 0.36
HSD17B10 Q99714 1/20 0.36
PDE2A O00408 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9915248 0.88 ALDH1A1 (0.42) ALDH1A1TSHRGAAMAPTMEN1
SCHEMBL14706797 0.87 ALDH1A1 (0.49) ALDH1A1TSHRGAAMAPTMEN1
SCHEMBL19266106 0.86 ALDH1A1 (0.35) ALDH1A1TSHRGAAMAPTMEN1
SCHEMBL14706812 0.86 ALDH1A1 (0.45) ALDH1A1TSHRGAAMAPTMEN1
SCHEMBL18748721 0.86 ALDH1A1 (0.45) ALDH1A1TSHRGAAMAPTMEN1
SCHEMBL17402207 0.85 ALDH1A1 (0.41) ALDH1A1TSHRMAPTMEN1KMT2A
SCHEMBL93073 0.85 ALDH1A1 (0.50) ALDH1A1TSHRGAAMAPTMEN1
SCHEMBL12841678 0.84 ALDH1A1 (0.37) ALDH1A1TSHRGAAMAPTMEN1
SCHEMBL16865913 0.82 ALDH1A1 (0.34) ALDH1A1TSHRGAAMAPTPDE2A
SCHEMBL15869196 0.82 PDE2A (0.35) ALDH1A1TSHRMAPTTDP1NPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 293 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367214-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230350290-A1 PATTERN FORMING METHOD, KIT, AND RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2023-11-02 US disclosed
US-11747727-B2 Chemical liquid, chemical liquid storage body, pattern forming method, and kit FUJIFILM CORPORATION (JP) 2023-09-05 US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 US disclosed
US-20230135117-A1 SOLUTION, SOLUTION STORAGE BODY, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2023-05-04 US disclosed
US-11640113-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-05-02 US disclosed
US-10678132-B2 Resin for hydrophobilizing resist surface, method for production thereof, and positive resist composition containing the resin FUJIFILM CORPORATION (JP) 2020-06-09 US disclosed
US-20180210339-A1 RESIST COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE, EACH USING RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2018-07-26 US disclosed
US-10031419-B2 Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device FUJIFILM CORPORATION (JP) 2018-07-24 US disclosed
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-20070218406-A1 Acid generator; exposure to actinic radiation FUJIFILM CORPORATION (JP) 2007-09-20 US disclosed
US-7267923-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-09-11 US disclosed
US-7255971-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-08-14 US disclosed
US-20070148584-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-28 US disclosed
US-20070148595-A1 Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed
US-7235341-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-06-26 US disclosed
US-7214467-B2 Photosensitive resin composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-7202015-B2 Positive photoresist composition and pattern making method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-04-10 US disclosed
US-20070072121-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed
US-20070072121-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed