SCHEMBL8276153

SCHEMBL8276153

CCO[Si](OCC)(OCC)C1CC2CC1C1C(=O)OC(=O)C21

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8276155 0.88
SCHEMBL18043723 0.83
SCHEMBL18298080 0.83
SCHEMBL18298085 0.83
SCHEMBL8276150 0.83
SCHEMBL6661239 0.78 KDM4E (0.34)
SCHEMBL18889840 0.77 ALDH1A1 (0.33)
SCHEMBL8276152 0.76
SCHEMBL4932853 0.76 KDM4E (0.31)
SCHEMBL12573998 0.76 KDM4E (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250044697-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CARBONYL STRUCTURE NISSAN CHEMICAL CORPORATION (JP) 2025-02-06 US disclosed
CN-110809739-B Composition for forming silicon-containing resist underlayer film soluble in alkaline developer 日产化学株式会社 2023-11-21 CN disclosed
CN-115016230-A Composition for forming silicon-containing resist underlayer film 日产化学工业株式会社 2022-09-06 CN disclosed
US-20220155688-A1 ALKALINE DEVELOPER SOLUABLE SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2022-05-19 US disclosed
US-11281104-B2 Alkaline developer soluable silicon-containing resist underlayer film-forming composition NISSAN CHEMICAL CORPORATION (JP) 2022-03-22 US disclosed
CN-107003613-B Composition for forming resist underlayer film for lithography containing hydrolyzable silane having halogen-containing carboxylic acid amide group 日产化学工业株式会社 2021-06-15 CN disclosed
CN-112558410-A Composition for forming silicon-containing resist underlayer film having organic group containing aliphatic polycyclic structure 日产化学工业株式会社 2021-03-26 CN disclosed
CN-107209460-B Composition for forming resist underlayer film for lithography containing hydrolyzable silane having carbonate skeleton 日产化学工业株式会社 2020-12-18 CN disclosed
US-10838303-B2 Resist underlayer film forming composition for lithography containing hydrolyzable silane having carbonate skeleton NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2020-11-17 US disclosed
US-20200225584-A1 ALKALINE DEVELOPER SOLUABLE SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2020-07-16 US disclosed
US-20170293227-A1 COATING LIQUID FOR RESIST PATTERN COATING NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-10-12 US disclosed
US-20170293227-A1 COATING LIQUID FOR RESIST PATTERN COATING NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-10-12 US disclosed
US-20170293227-A1 COATING LIQUID FOR RESIST PATTERN COATING NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-10-12 US disclosed
US-20170153549-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING ORGANIC GROUP HAVING ALIPHATIC POLYCYCLIC STRUCTURE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-06-01 US disclosed
CN-106715619-A Application solution for resist pattern coating 日产化学工业株式会社 2017-05-24 CN disclosed
US-20160363867-A1 POLYMER-CONTAINING COATING LIQUID APPLIED TO RESIST PATTERN NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-12-15 US disclosed
US-20160363867-A1 POLYMER-CONTAINING COATING LIQUID APPLIED TO RESIST PATTERN NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-12-15 US disclosed
US-20160363867-A1 POLYMER-CONTAINING COATING LIQUID APPLIED TO RESIST PATTERN NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-12-15 US disclosed
CN-106030418-A Polymer-containing coating liquid applied to resist pattern 日产化学工业株式会社 2016-10-12 CN disclosed
US-20120129048-A1 BINDER FOR LITHIUM SECONDARY BATTERY, NEGATIVE ELECTRODE FOR LITHIUM SECONDARY BATTERY, LITHIUM SECONDARY BATTERY, BINDER PRECURSOR SOLUTION FOR LITHIUM SECONDARY BATTERY, AND METHOD FOR MANUFACTURING NEGATIVE ELECTRODE FOR LITHIUM SECONDARY BATTERY SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-24 US disclosed