⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8603752 | 0.73 | — | — | |
| SCHEMBL296318 | 0.71 | — | — | |
| SCHEMBL10515343 | 0.69 | CA2 (0.62) | — | |
| SCHEMBL15387346 | 0.69 | — | — | |
| Fluoride SCHEMBL7192638 | 0.68 | — | — | |
| SCHEMBL11871457 | 0.68 | CA2 (0.31) | — | |
| SCHEMBL11875297 | 0.68 | CA2 (0.31) | — | |
| SCHEMBL4814111 | 0.68 | — | — | |
| SCHEMBL1699694 | 0.67 | CA2 (0.59) | — | |
| SCHEMBL18300850 | 0.67 | CA2 (0.59) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20120176016-A1 | CORE-SHELL PARTICULATES, ARTICLES, AND METHOD OF MAKING | GENERAL ELECTRIC COMPANY (US) | 2012-07-12 | — | — | US | disclosed |
| US-8143128-B2 | Multilayer dielectric defect method | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) | 2012-03-27 | — | — | US | disclosed |
| US-20100279514-A1 | MULTILAYER DIELECTRIC | HEWLETT-PACKARD DEVELOPMENT COMPANY LP | 2010-11-04 | — | — | US | disclosed |
| US-7768080-B2 | Multilayer dielectric | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) | 2010-08-03 | — | — | US | disclosed |
| WO-2009042380-A1 | CORE-SHELL PARTICULATES, ARTICLES, AND METHOD OF MAKING | GENERAL ELECTRIC COMPANY (US) | 2009-04-02 | — | — | WO | disclosed |
| US-20090032890-A1 | MULTILAYER DIELECTRIC | HEWLETT-PACKARD DEVELOPMENT | 2009-02-05 | — | — | US | disclosed |
| EP-1810339-A1 | METHOD OF FORMING A SOLUTION PROCESSED TRANSISTOR HAVING A MULTILAYER DIELECTRIC | Hewlett-Packard Development Company, L.P. (US) | 2007-07-25 | — | — | EP | disclosed |
| WO-2006047023-A1 | METHOD OF FORMING A SOLUTION PROCESSED TRANSISTOR HAVING A MULTILAYER DIELECTRIC | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) | 2006-05-04 | — | — | WO | disclosed |
| US-20060088962-A1 | Method of forming a solution processed transistor having a multilayer dielectric | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. | 2006-04-27 | — | — | US | disclosed |