Zinc Ion

Zinc Ion

SCHEMBL8356403

[Se-2].[Si].[Zn+2]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Zinc Ion SCHEMBL17728078 1.00
Zinc Ion SCHEMBL29834953 0.82
Zinc Ion SCHEMBL30451269 0.82
Zinc Ion SCHEMBL9345537 0.82 GPR39 (0.33)
Zinc Ion SCHEMBL19508 0.82
Zinc Ion SCHEMBL11343192 0.82 GPR39 (0.33)
Zinc Ion SCHEMBL23928017 0.67
Zinc Ion SCHEMBL1291858 0.67
Zinc Ion SCHEMBL6834492 0.67
Zinc Ion SCHEMBL142713 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5989933-A BUFFER LAYERS ARE FORMED BETWEEN THE SILICON LAYER AND THE CADMIUM TELLURIDE LAYER, THE FIRST BUFFER LAYER IS ZINC SULFIDE; EACH BUFFER LAYER HAS A LATTICE CONSTANT GREATER THAN THE LATTICE CONSTANT OF THE LAYER BELOW IT AND LESS THAN THE DRS TECHNOLOGIES, INC. (US) 1999-11-23 US disclosed
US-5838053-A Method of forming a cadmium telluride/silicon structure RAYTHEON TI SYSTEMS, INC. (US) 1998-11-17 US disclosed