SCHEMBL8416034

SCHEMBL8416034

CO[Si](C#Cc1cccc2cc3ccccc3cc12)(OC)OC

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NQO1 P15559 1/20 0.38
ALDH1A1 P00352 4/20 0.33
KDM4E B2RXH2 3/20 0.33
GRM5 P41594 3/20 0.33
GAA P10253 2/20 0.33
CHAT P28329 1/20 0.33
CYP1A2 P05177 2/20 0.32
CYP2A6 P11509 1/20 0.32
NQO2 P16083 1/20 0.31
MEN1 O00255 1/20 0.31
MAPT P10636 1/20 0.31
KMT2A Q03164 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
HSD17B10 Q99714 2/20 0.31
HPGD P15428 1/20 0.31
DHFR P00374 1/20 0.31
TUBB4A P04350 1/20 0.31
TUBB P07437 1/20 0.31
TUBA3C P0DPH7 1/20 0.31
TUBA1B P68363 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14299203 0.83 NQO1 (0.32) NQO1ALDH1A1KDM4EGRM5GAA
SCHEMBL9472950 0.81 ALDH1A1 (0.38) NQO1ALDH1A1KDM4EGRM5GAA
SCHEMBL3440746 0.80 NQO1 (0.42) NQO1ALDH1A1KDM4EGRM5GAA
SCHEMBL1639958 0.78 GRM5 (0.32) ALDH1A1KDM4EGRM5CYP1A2MEN1
SCHEMBL652937 0.77 NQO1 (0.38) NQO1ALDH1A1KDM4ECYP1A2CYP2A6
SCHEMBL27820573 0.77 P2RY6 (0.34) NQO1ALDH1A1KDM4EGRM5GAA
SCHEMBL27814779 0.77 ALDH1A1 (0.33) NQO1ALDH1A1KDM4EGRM5GAA
SCHEMBL28433044 0.76 GRM5 (0.33) NQO1ALDH1A1KDM4EGRM5GAA
SCHEMBL497591 0.76 GRM5 (0.33) NQO1ALDH1A1KDM4EGRM5GAA
SCHEMBL15756938 0.76 P2RY6 (0.34) NQO1ALDH1A1KDM4EGRM5GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-100432837-C Thiophene-containing photoacid generators for use in photolithography IBM (US) 2008-11-12 CN claimed
CN-103376660-B Containing the photo-corrosion-resisting agent composition for protecting hydroxyl and its pattern formation method is used for negative development 国际商业机器公司 2017-12-05 CN disclosed
CN-103930828-B Hydridization photo-corrosion-resisting agent composition and its pattern formation method of use 国际商业机器公司 2016-10-12 CN disclosed
CN-103201680-B Photoresist composition for negative development and pattern forming method using the same 国际商业机器公司 2016-07-06 CN disclosed
CN-102741747-B Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same IBM 2014-09-10 CN disclosed
CN-103930828-A Hybrid photoresist composition and pattern forming method using thereof IBM 2014-07-16 CN disclosed
CN-103376660-A Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof IBM 2013-10-30 CN disclosed
CN-101910944-B Ionic, organic photoacid generators for DUV, MUV and optical lithography based on peraceptor-substituted aromatic anions IBM 2013-08-07 CN disclosed
CN-103201680-A Photoresist composition for negative development and pattern forming method using the same IBM 2013-07-10 CN disclosed
CN-102741747-A Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same IBM 2012-10-17 CN disclosed
CN-101910944-A Ionic, organic photoacid generators for DUV, MUV and optical lithography based on peraceptor-substituted aromatic anions IBM 2010-12-08 CN disclosed
CN-100432837-C Thiophene-containing photoacid generators for use in photolithography IBM (US) 2008-11-12 CN disclosed
CN-1518684-A Thiophene-containing photoacid generators for use in photolithography �Ҵ���˾ 2004-08-04 CN disclosed
EP-0939339-A1 Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups International Business Machines Corporation (US) 1999-09-01 EP disclosed