SCHEMBL842697

SCHEMBL842697

C[C]=O.[InH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1561 0.93 — —
SCHEMBL2552774 0.93 — —
SCHEMBL668342 0.86 — —
SCHEMBL540860 0.86 — —
SCHEMBL10614913 0.86 — —
SCHEMBL25405176 0.86 — —
SCHEMBL1021899 0.86 — —
SCHEMBL21409672 0.86 — —
SCHEMBL22092371 0.86 — —
SCHEMBL152069 0.86 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024147019-A1 SCALABLE SYNTHESIS OF III-V NANOCRYSTALS QUANTUM SCIENCE LTD (GB) 2024-07-11 — — WO claimed
US-8529802-B2 Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-09-10 — — US claimed
US-8153022-B2 Semiconductor phosphor nanoparticle SHARP KABUSHIKI KAISHA (JP) 2012-04-10 — — US claimed
US-20100210069-A1 Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-08-19 — — US claimed
US-7163638-B2 Method for forming a transparent electrode film SEIKO EPSON CORPORATION (JP) 2007-01-16 — — US claimed
US-20050040135-A1 Method for forming a transparent electrode film SEIKO EPSON CORPORATION (JP) 2005-02-24 — — US claimed
EP-0489621-B1 Process of making an alumina layer on glass, product obtained and its use in glazings with conducting layer SAINT GOBAIN VITRAGE (FR) 1995-08-02 — — EP claimed
JP-61043723-A — — None — — JP disclosed
WO-2024147019-A1 SCALABLE SYNTHESIS OF III-V NANOCRYSTALS QUANTUM SCIENCE LTD (GB) 2024-07-11 — — WO disclosed
EP-3673096-A1 MANUFACTURING PROCESSES TO SYNTHESIZE, FUNCTIONALIZE, SURFACE TREAT AND/OR ENCAPSULATE POWDERS, AND APPLICATIONS THEREOF Forge Nano, Inc. (US) 2020-07-01 — — EP disclosed
CN-105873890-B Oxidation process for the preparation of purified carboxylic acids BP北美公司 2019-12-13 — — CN disclosed
US-20190292298-A1 METHOD FOR DELAYING CURING IN POLYURETHANE AND COMPOSITIONS AND ARTICLES MADE THEREFROM JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT 2019-09-26 — — US disclosed
WO-2018075302-A1 METHOD FOR DELAYING CURING IN POLYURETHANE AND COMPOSITIONS AND ARTICLES MADE THEREFROM ROGERS CORPORATION (US) 2018-04-26 — — WO disclosed
WO-2004100250-A1 A THIN-FILM SOLAR CELL SOLIBRO AB (SE) 2004-11-18 — — WO disclosed
US-5268522-A Zeolite catalyst INSTITUT FRANCAIS DE PETROLE (FR) 1993-12-07 — — US disclosed
US-5227557-A MFI Zeolite INSTITUT FRANCAIS DU PETROLE (FR) 1993-07-13 — — US disclosed
US-5215950-A Catalytic supports and selectivity INSTITUT FRANCAIS DU PETROLE (FR) 1993-06-01 — — US disclosed
US-4618508-A Process for producing composite layers COMMISSARIAT A L'ENERGIE ATOMIQUE (FR) 1986-10-21 — — US disclosed
US-4615919-A POSITIONING LIQUID CRYSTALS BETWEEN BASE PLATES COATED WITH NYLON, EPOXY RESIN, AND TANTALUM AND INDIUM COMPOUNDS CANON KABUSHIKI KAISHA (JP) 1986-10-07 — — US disclosed
JP-S6143723-A PASTE FOR FORMING TRANSPARENT INSULATING FILM ALPS ELECTRIC CO LTD 1986-03-03 — — JP disclosed
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