SCHEMBL8512980

SCHEMBL8512980

C[SiH2][SiH](C)Cl

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9766334 0.70
SCHEMBL10615161 0.70
SCHEMBL132266 0.67
SCHEMBL8415457 0.67
SCHEMBL48919 0.65
SCHEMBL6820 0.65
SCHEMBL8384915 0.63
SCHEMBL8385687 0.60
SCHEMBL23300848 0.60
SCHEMBL7905425 0.60

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3684778-B1 INTEGRATED PROCESS FOR THE MANUFACTURE OF METHYLCHLOROHYDRIDOMONOSILANES MOMENTIVE PERFORMANCE MAT INC (US) 2023-08-02 EP claimed
US-11518773-B2 Integrated process for the manufacture of methylchlorohydridomonosilanes MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2022-12-06 US claimed
CN-109755019-A A kind of low temperature resistant capacitor plant oil base impregnating agent 骆玲 2019-05-14 CN claimed
EP-3684778-B1 INTEGRATED PROCESS FOR THE MANUFACTURE OF METHYLCHLOROHYDRIDOMONOSILANES MOMENTIVE PERFORMANCE MAT INC (US) 2023-08-02 EP disclosed
US-11518773-B2 Integrated process for the manufacture of methylchlorohydridomonosilanes MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2022-12-06 US disclosed
CN-110167879-A Fumed silica and method for producing same 株式会社德山 2019-08-23 CN disclosed
CN-109755019-A A kind of low temperature resistant capacitor plant oil base impregnating agent 骆玲 2019-05-14 CN disclosed
CN-106061921-B Method for solidifying the silicon carbide precursors fiber based on raw polysilazane 通用电气公司 2019-03-19 CN disclosed
CN-105609406-B The manufacturing method of semiconductor devices, substrate processing device, gas supply system 株式会社日立国际电气 2018-09-28 CN disclosed
CN-105296963-B The manufacturing method and substrate processing device of semiconductor devices 株式会社日立国际电气 2018-06-12 CN disclosed
CN-107026077-A Manufacture method, lining processor and the gas supply system of semiconductor devices 株式会社日立国际电气 2017-08-08 CN disclosed
CN-104183480-B Semiconductor device manufacturing method and substrate processing apparatus 株式会社日立国际电气 2017-03-29 CN disclosed
US-5939577-A REACTION OF ORGANOSILANE WITH ANHYDROUS COPPER CHLORIDE SANDIA CORPORATION (US) 1999-08-17 US disclosed