SCHEMBL8659668

SCHEMBL8659668

O=C(Nc1ccccc1Cl)c1cc2ccccc2c(N=Nc2ccc3c(c2)Cc2cc(N=Nc4c(O)c(C(=O)Nc5ccccc5Cl)cc5ccccc45)ccc2-3)c1O

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ NQO2 P16083 1/20 0.48
▸ NPC1 O15118 4/20 0.43
▸ POLB P06746 4/20 0.43
▸ CASP3 P42574 1/20 0.43
▸ ATM Q13315 1/20 0.43
▸ SENP8 Q96LD8 1/20 0.43
▸ SENP7 Q9BQF6 1/20 0.43
▸ SENP6 Q9GZR1 1/20 0.43
▸ MEN1 O00255 6/20 0.42
▸ KMT2A Q03164 6/20 0.42
▸ MAPT P10636 3/20 0.42
▸ ALDH1A1 P00352 2/20 0.42
▸ RAB9A P51151 2/20 0.42
▸ MAPK1 P28482 2/20 0.42
▸ KDM4E B2RXH2 1/20 0.42
▸ IDO1 P14902 1/20 0.42
▸ RECQL P46063 1/20 0.42
▸ CASP6 P55212 1/20 0.42
▸ CTDSP1 Q9GZU7 1/20 0.42
▸ L3MBTL1 Q9Y468 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8659666 1.00 NQO2 (0.48) NQO2NPC1POLBCASP3ATM
SCHEMBL5029442 0.87 NQO2 (0.49) NQO2NPC1POLBCASP3ATM
SCHEMBL713606 0.87 NQO2 (0.49) NQO2NPC1POLBCASP3ATM
SCHEMBL12228818 0.87 NQO2 (0.49) NQO2NPC1POLBCASP3ATM
SCHEMBL14174259 0.84 NQO2 (0.40) NQO2NPC1POLBCASP3ATM
SCHEMBL14565032 0.84 NQO2 (0.57) NQO2NPC1POLBCASP3ATM
SCHEMBL14092687 0.83 NQO2 (0.57) NQO2NPC1POLBCASP3ATM
SCHEMBL10083534 0.82 F12 (0.46) NQO2NPC1POLBCASP3ATM
SCHEMBL13373965 0.82 NQO2 (0.45) NQO2NPC1POLBCASP3ATM
SCHEMBL14817399 0.82 NQO2 (0.44) NQO2NPC1POLBCASP3ATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0469823-B1 Photosensitive materials for electrophotography having a double-layer structure of a charge generation layer and a charge transport layer MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 1998-09-09 — — EP disclosed
US-5312705-A Photosensitive materials for electrophotography having a double-layer structure of a charge generation layer and a charge transport layer MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1994-05-17 — — US disclosed
EP-0469823-A1 Photosensitive materials for electrophotography having a double-layer structure of a charge generation layer and a charge transport layer MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1992-02-05 — — EP disclosed
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