⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL866497 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL6278415 | 0.93 | ALDH1A1 (0.30) | — | |
| SCHEMBL72016 | 0.91 | — | — | |
| SCHEMBL28465844 | 0.83 | — | — | |
| SCHEMBL6278418 | 0.83 | ALDH1A1 (0.33) | — | |
| SCHEMBL1415962 | 0.73 | — | — | |
| SCHEMBL1415964 | 0.73 | — | — | |
| SCHEMBL26969361 | 0.72 | ALDH1A1 (0.56) | — | |
| Dimethylamine SCHEMBL3046457 | 0.68 | ALDH1A1 (0.36) | — | |
| Hydrochloric Acid SCHEMBL5442824 | 0.67 | ALDH1A1 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-107706233-B | Semiconductor element and manufacturing method thereof | 联华电子股份有限公司 | 2022-07-12 | — | — | CN | disclosed |
| CN-114300363-A | Semiconductor element and manufacturing method thereof | 蓝枪半导体有限责任公司 | 2022-04-08 | — | — | CN | disclosed |
| CN-107403835-B | Semiconductor device and manufacturing process thereof | 联芯集成电路制造(厦门)有限公司 | 2021-12-14 | — | — | CN | disclosed |
| CN-106558620-B | Semiconductor device and method for forming the same | 联华电子股份有限公司 | 2021-09-07 | — | — | CN | disclosed |
| CN-105762106-B | Semiconductor device and manufacturing process thereof | 联华电子股份有限公司 | 2021-02-19 | — | — | CN | disclosed |
| CN-106910737-B | Semiconductor device and method for forming the same | 联华电子股份有限公司 | 2021-01-15 | — | — | CN | disclosed |
| CN-106158857-B | Semiconductor element and manufacturing method thereof | 联华电子股份有限公司 | 2020-12-22 | — | — | CN | disclosed |
| CN-106033745-B | Semiconductor device and method for forming the same | 联华电子股份有限公司 | 2020-07-07 | — | — | CN | disclosed |
| CN-105702727-B | Metal oxide semiconductor device and forming method thereof | 联华电子股份有限公司 | 2020-06-16 | — | — | CN | disclosed |
| CN-105448918-B | Complementary metal oxide semiconductor and manufacturing method thereof | 联华电子股份有限公司 | 2020-05-12 | — | — | CN | disclosed |
| US-8030218-B2 | Method for selectively modifying spacing between pitch multiplied structures | MICRON TECHNOLOGY, INC. (US) | 2011-10-04 | — | — | US | disclosed |
| US-20100289070-A1 | METHODS FOR ISOLATING PORTIONS OF A LOOP OF PITCH-MULTIPLIED MATERIAL AND RELATED STRUCTURES | MICRON TECHNOLOGY, INC. (US) | 2010-11-18 | — | — | US | disclosed |
| EP-2232539-A2 | METHODS FOR ISOLATING PORTIONS OF A LOOP OF PITCH-MULTIPLIED MATERIAL AND RELATED STRUCTURES | Micron Technology, INC. (US) | 2010-09-29 | — | — | EP | disclosed |
| US-7790531-B2 | Methods for isolating portions of a loop of pitch-multiplied material and related structures | MICRON TECHNOLOGY, INC. (US) | 2010-09-07 | — | — | US | disclosed |
| US-20100003797-A1 | METHOD FOR FORMING TRANSISTOR WITH HIGH BREAKDOWN VOLTAGE | MICRON TECHNOLOGY, INC. (US) | 2010-01-07 | — | — | US | disclosed |
| US-20090239382-A1 | METHOD FOR SELECTIVELY MODIFYING SPACING BETWEEN PITCH MULTIPLIED STRUCTURES | MICRON TECHNOLOGY, INC. (US) | 2009-09-24 | — | — | US | disclosed |
| WO-2009079517-A2 | METHODS FOR ISOLATING PORTIONS OF A LOOP OF PITCH-MULTIPLIED MATERIAL AND RELATED STRUCTURES | MICRON TECHNOLOGY, INC. (US) | 2009-06-25 | — | — | WO | disclosed |
| US-20090152645-A1 | METHODS FOR ISOLATING PORTIONS OF A LOOP OF PITCH-MULTIPLIED MATERIAL AND RELATED STRUCTURES | MICRON TECHNOLOGY, INC. (US) | 2009-06-18 | — | — | US | disclosed |
| US-20090035665-A1 | PROCESS OF SEMICONDUCTOR FABRICATION WITH MASK OVERLAY ON PITCH MULTIPLIED FEATURES AND ASSOCIATED STRUCTURES | MICRON TECHNOLOGY, INC. (US) | 2009-02-05 | — | — | US | disclosed |
| WO-2009018059-A2 | PROCESS OF SEMICONDUCTOR FABRICATION WITH MASK OVERLAY ON PITCH MULTIPLIED FEATURES AND ASSOCIATED STRUCTURES | MICRON TECHNOLOGY, INC. (US) | 2009-02-05 | — | — | WO | disclosed |