⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL20377476 | 0.77 | — | — | |
| SCHEMBL16650151 | 0.74 | — | — | |
| SCHEMBL1135065 | 0.73 | — | — | |
| SCHEMBL1135088 | 0.73 | — | — | |
| SCHEMBL16650655 | 0.72 | — | — | |
| SCHEMBL16650456 | 0.72 | — | — | |
| SCHEMBL16649903 | 0.72 | — | — | |
| SCHEMBL4430872 | 0.71 | — | — | |
| SCHEMBL17337399 | 0.69 | — | — | |
| SCHEMBL17589597 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 56 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2025226985-A1 | PASSIVATION OF POLYSILICON MATERIAL AND SELECTIVE DEPOSITION OF DIELECTRIC MATERIAL UTILIZING ALKYNES | VERSUM MATERIALS US, LLC (US) | 2025-10-30 | — | — | WO | claimed |
| US-11732351-B2 | Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films | VERSUM MATERIALS US, LLC (US) | 2023-08-22 | — | — | US | claimed |
| US-20210388489-A1 | Methods for Depositing a Conformal Metal or Metalloid Silicon Nitride Film and Resultant Films | VERSUM MATERIALS US, LLC (US) | 2021-12-16 | — | — | US | claimed |
| US-20180245215-A1 | METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM AND RESULTANT FILMS | VERSUM MATERIALS US, LLC | 2018-08-30 | — | — | US | claimed |
| EP-3347504-A1 | METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM AND RESULTANT FILMS | Air Products and Chemicals, Inc. (US) | 2018-07-18 | — | — | EP | claimed |
| US-20160315163-A1 | PROCESS FOR FORMING GATE INSULATORS FOR TFT STRUCTURES | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) | 2016-10-27 | — | — | US | claimed |
| US-20160087028-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME | HIROTA TOSHIYUKI (JP) | 2016-03-24 | — | — | US | claimed |
| US-8735304-B2 | Film forming method, film forming apparatus, and storage medium | ELPIDA MEMORY INC. (JP) | 2014-05-27 | — | — | US | claimed |
| US-8288241-B2 | Semiconductor device, method of manufacturing the same and adsorption site blocking atomic layer deposition method | ELPIDA MEMORY, INC. (JP) | 2012-10-16 | — | — | US | claimed |
| US-20120244721-A1 | FILM FORMING METHOD, FILM FORMING APPARATUS, AND STORAGE MEDIUM | TOKYO ELECTRON LIMITED (JP) | 2012-09-27 | — | — | US | claimed |
| US-20120077322-A1 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ADSORPTION SITE BLOCKING ATOMIC LAYER DEPOSITION METHOD | TOKYO ELECTRON LIMITED (JP) | 2012-03-29 | — | — | US | claimed |
| EP-4705539-A1 | AREA SELECTIVE DEPOSITION OF METAL FILM ON SILICON CONTAINING SURFACES UTILIZING ALCOHOLS | Versum Materials US, LLC (US) | 2026-03-11 | — | — | EP | disclosed |
| EP-4690280-A1 | AREA SELECTIVE DEPOSITION OF DIELECTRIC FILM ON SILICON CONTAINING SURFACES UTILIZING ALCOHOLS | Versum Materials US, LLC (US) | 2026-02-11 | — | — | EP | disclosed |
| WO-2025226985-A1 | PASSIVATION OF POLYSILICON MATERIAL AND SELECTIVE DEPOSITION OF DIELECTRIC MATERIAL UTILIZING ALKYNES | VERSUM MATERIALS US, LLC (US) | 2025-10-30 | — | — | WO | disclosed |
| US-12435416-B2 | Compositions and methods using same for non-conformal deposition of silicon containing films | VERSUM MATERIALS US, LLC (US) | 2025-10-07 | — | — | US | disclosed |
| US-20120309163-A1 | METHOD OF FORMING TITANIUM OXIDE FILM HAVING RUTILE CRYSTALLINE STRUCTURE | TOKYO ELECTRON LIMITED (JP) | 2012-12-06 | — | — | US | disclosed |
| US-8288241-B2 | Semiconductor device, method of manufacturing the same and adsorption site blocking atomic layer deposition method | ELPIDA MEMORY, INC. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-20120244721-A1 | FILM FORMING METHOD, FILM FORMING APPARATUS, AND STORAGE MEDIUM | TOKYO ELECTRON LIMITED (JP) | 2012-09-27 | — | — | US | disclosed |
| US-20120077322-A1 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ADSORPTION SITE BLOCKING ATOMIC LAYER DEPOSITION METHOD | TOKYO ELECTRON LIMITED (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20110000875-A1 | Methods Of Forming Capacitors | MICRON SEMICONDUCTOR PRODUCTS, INC. | 2011-01-06 | — | — | US | disclosed |