⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL445380 | 0.87 | — | — | |
| SCHEMBL19273362 | 0.87 | — | — | |
| SCHEMBL14556977 | 0.86 | — | — | |
| SCHEMBL14559653 | 0.85 | — | — | |
| SCHEMBL16893286 | 0.85 | — | — | |
| SCHEMBL12394225 | 0.84 | — | — | |
| SCHEMBL14559655 | 0.83 | — | — | |
| SCHEMBL14556978 | 0.82 | — | — | |
| SCHEMBL13240560 | 0.82 | — | — | |
| SCHEMBL525283 | 0.81 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20060275697-A1 | Top coating composition for photoresist and method of forming photoresist pattern using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-12-07 | — | — | US | claimed |
| US-11597696-B2 | Method for purifying polymerizable fluoromonomer by distillation | CENTRAL GLASS COMPANY, LIMITED (JP) | 2023-03-07 | — | — | US | disclosed |
| US-20210317065-A1 | Method for Purifying Polymerizable Fluoromonomer by Distillation | CENTRAL GLASS COMPANY, LIMITED (JP) | 2021-10-14 | — | — | US | disclosed |
| US-20200089116-A1 | Fluorine-Containing Monomer, Fluorine-Containing Polymer, Pattern Forming Composition Using Same, and Pattern Forming Method of Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2020-03-19 | — | — | US | disclosed |
| US-20190243244-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2019-08-08 | — | — | US | disclosed |
| US-9678425-B2 | Polymerizable fluoromonomer, fluoropolymer, resist material, and method of pattern formation | CENTRAL GLASS COMPANY, LIMITED (JP) | 2017-06-13 | — | — | US | disclosed |
| US-9678426-B2 | Polymerizable fluoromonomer, fluoropolymer, resist material, and method of pattern formation | CENTRAL GLASS COMPANY, LIMITED (JP) | 2017-06-13 | — | — | US | disclosed |
| US-9604891-B2 | Methods for producing fluorine-containing hydroxyaldehyde, fluorine-containing propanediol, and fluorine-containing alcohol monomer | CENTRAL GLASS COMPANY, LIMITED (JP) | 2017-03-28 | — | — | US | disclosed |
| US-20150361026-A1 | Methods for Producing Fluorine-Containing Hydroxyaldehyde, Fluorine-Containing Propanediol, and Fluorine-Containing Alcohol Monomer | CENTRAL GLASS COMPANY, LIMITED (JP) | 2015-12-17 | — | — | US | disclosed |
| US-9204652-B2 | Antibacterial agent, substrate surface treatment method using the same, antibacterial agent composition, and substrate surface treatment method using the same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2015-12-08 | — | — | US | disclosed |
| US-20110245395-A1 | Top Coat Composition | CENTRAL GLASS COMPANY, LIMITED | 2011-10-06 | — | — | US | disclosed |
| US-7759044-B2 | Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-07-20 | — | — | US | disclosed |
| US-7759044-B2 | Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-07-20 | — | — | US | disclosed |
| US-20080153034-A1 | Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution | GLOBALFOUNDRIES INC. (KY) | 2008-06-26 | — | — | US | disclosed |
| US-20080153034-A1 | Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution | GLOBALFOUNDRIES INC. (KY) | 2008-06-26 | — | — | US | disclosed |
| US-7358029-B2 | Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-04-15 | — | — | US | disclosed |
| US-7358029-B2 | Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-04-15 | — | — | US | disclosed |
| US-20070231734-A1 | Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution | GLOBALFOUNDRIES U.S. INC. | 2007-10-04 | — | — | US | disclosed |
| US-20070231734-A1 | Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution | GLOBALFOUNDRIES U.S. INC. | 2007-10-04 | — | — | US | disclosed |
| US-20060275697-A1 | Top coating composition for photoresist and method of forming photoresist pattern using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-12-07 | — | — | US | disclosed |